Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device

1. A ferroelectric capacitor having a bottom electrode, a ferroelectric thin film provided on the bottom electrode, and a top electrode provided on the ferroelectric thin film, wherein

said top electrode comprises an Ru metal crystalline phase and 0.5-5 atm % interstitial oxygen atoms in the RU metal crystalline phase.

2. The capacitor according to claim 1 , wherein

said ferroelectric thin film includes Pb(Zr y Ti 1-y )O 3 (where, y is a predetermined number of 0<y<1) as a main component.

3. The capacitor according to claim 1 , wherein said bottom electrode, ferroelectric thin film and top electrode are built up on an area that includes a step portion or trench.

4. A semiconductor memory device comprising one or more of the ferroelectric capacitors set forth in claim 1 .

5. A ferroelectric capacitor having a bottom electrode, a ferroelectric thin film provided on the bottom electrode, and a top electrode provided on the ferroelectric thin film, wherein

either one or both of said top electrode and bottom electrode comprises an Ru metal crystalline phase and 0.5-5 atm % interstitial oxygen atoms in the RU metal crystalline phase.

6. The capacitor according to claim 5 , wherein

said ferroelectric thin film includes Pb(Zr y Ti 1-y )O 3 (where, y is a predetermined number of 0<y<1) as a main component.

7. The capacitor according to claim 5 , wherein said bottom electrode, ferroelectric thin film and top electrode are built up on an area that includes a step portion or trench.

8. A semiconductor memory device comprising one or more of the ferroelectric capacitors set forth in claim 5 .

9. A ferroelectric capacitor having a bottom electrode, a ferroelectric thin film provided on the bottom electrode, and a top electrode provided on the ferroelectric thin film, wherein

said top electrode comprises a metal that has a metal crystalline phase, contains interstitial oxygen atoms in the metal crystalline phase, and is devoid of a metal oxide crystalline phase.

10. The ferroelectric capacitor according to claim 9 , wherein a main component of said metal is at least one element selected from Ir and Ru.

11. The capacitor according to claim 9 , wherein

said ferroelectric thin film includes Pb(Zr y Ti 1-y )O 3 (where, y is a predetermined number of 0<y<1) as a main component.

12. The capacitor according to claim 9 , wherein said bottom electrode, ferroelectric thin film and top electrode are built up on an area that includes a step portion or trench.

13. A semiconductor memory device comprising one or more of the ferroelectric capacitors set forth in claim 9 .

14. A ferroelectric capacitor having first and second electrodes, and a ferroelectric thin film arranged between said first and second electrodes, wherein

at least one of said first and second electrodes comprises a metal that has a metal crystalline phase, contains interstitial oxygen atoms in the metal and crystalline phase, and is devoid of a metal oxide crystalline phase.

15. The ferroelectric capacitor according to claim 14 , wherein a main component of said metal is at least one element selected from Ir and Ru.

16. The ferroelectric capacitor according to claim 14 , wherein

said metal is Ru,

said metal crystalline phase is an Ru metal crystalline phase, and

the oxygen content in said Ru metal crystalline phase is in a range of 0.5-5 atm %.

17. The capacitor according to claim 14 , wherein

said ferroelectric thin film includes Pb(Zr y Ti 1-y )O 3 (where, y is a predetermined number of 0<y<1) as a main component.

18. The capacitor according to claim 14 , wherein said first electrode, ferroelectric thin film and second electrode are built up on an area that includes a step portion or trench.

19. A semiconductor memory device comprising one or more of the ferroelectric capacitors set forth in claim 14 .