Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications
View Patent ↗A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.
1. A semiconductor device, comprising:
at least one semiconductor path, said semiconductor path substantially formed from surface-modified semiconductor particles each having a base body formed from a semiconductor particle and a monomolecular layer of ligands disposed on a surface of said base body;
a first contact coupled to said semiconductor path for injecting charge carriers into said semiconductor path; and
a second contact coupled to said semiconductor path for extracting the charge carriers from said semiconductor path.
2. The semiconductor device according to claim 1 , wherein said surface-modified semiconductor particles are formed from an inorganic material.
3. The semiconductor device according to claim 1 , wherein said ligands are bonded on said base body by a covalent bond.
4. The semiconductor device according to claim 1 , wherein said ligands are bonded to said base body by a linker group.
5. The semiconductor device according to claim 4 , wherein said linker group contains an atom selected from the group consisting of oxygen atoms, sulfur atoms, nitrogen atoms and carbon atoms.
6. The semiconductor device according to claim 1 , wherein a plurality of said surface-modified semiconductor particles are combined to form agglomerates.
7. The semiconductor device according to claim 1 , wherein said ligands contain at least two linker groups, and adjacent base bodies are linked to form a network by said ligands which contain said at least two linker groups.
8. The semiconductor device according to claim 1 , wherein said ligands contain an alkyl group or an aryl group.
9. The semiconductor device according to claim 1 , wherein said semiconductor path has an electrically nonconductive matrix, and said surface-modified semiconductor particles are embedded in said electrically nonconductive matrix.
10. The semiconductor device according to claim 9 , wherein said electrically nonconductive matrix is formed from an organic polymer.
11. The semiconductor device according to claim 1 , wherein the semiconductor device is a transistor having a source electrode, a drain electrode, and a gate electrode insulated by a gate dielectric, said first contact forming said source electrode, and said second contact forming said drain electrode.
12. The semiconductor device according to claim 1 , wherein:
the semiconductor device is a diode;
said surface-modified semiconductor particles include first surface-modified semiconductor particles and second modified semiconductor particles; and said semiconductor path contains at least a first section having said first surface-modified semiconductor particles and a second section having said second modified semiconductor particles adjoining said first section.
13. A method for fabricating a semiconductor device, which comprises the steps of:
providing a substrate;
depositing at least one printable formulation, containing a solvent and surface-modified semiconductor particles, on the substrate using a printing technique resulting in a formation of a semiconductor path, the surface-modified semiconductor particles each have a base body formed from a semiconductor particle and a monomolecular layer of ligands disposed on a surface of the base body;
coupling a first contact to the semiconductor path for injecting charge carriers into the semiconductor path; and coupling a second contact to said semiconductor path for extracting the charge carriers from the semiconductor path.
14. The method according to claim 13 , which further comprises applying the printable formulation to the substrate using a printing process selected from the group consisting of inkjet printing, offset printing and flexographic printing.