Method for producing alignment mark
View Patent ↗A method for producing an alignment mark is performed such that the alignment mark can be removed from the surface of a substrate without leaving any trace thereof after the alignment mark has been used for alignment. After a first photoresist layer has been formed on a substrate, the first photoresist layer is subjected to patterning, and the alignment mark is thereby formed from the first photoresist layer. In the next step, after a second photoresist layer has been formed so as to cover the alignment mark, the second photoresist layer is subjected to patterning on the basis of the alignment mark. After the surface of the substrate has been subjected to etching by use of a resist mask thus formed, the resist mask and the alignment mark are removed, and the region where the alignment mark has been located is made flat.
1. A method for transferring a pattern to an object, comprising the steps of:
forming a first photoresist layer over the object, said first photoresist layer being made of a first material;
forming an alignment mark from said first photoresist layer by removing a portion other than an alignment mark forming portion of said first photoresist layer, the alignment mark being made of the alignment mark forming portion of the first photoresist layer;
forming a second photoresist layer over the object so as to cover said alignment mark, said second photoresist layer being made of a second material that is different from the first material;
patterning said second photoresist layer on the basis of said alignment mark;
transferring a pattern of the second photoresist layer into a surface of the object; and
removing said second photoresist layer and said alignment mark; wherein
a pattern of the alignment mark is not transferred into the surface of the object.
2. The method of claim 1 , wherein the step of transferring the pattern of the second photoresist layer into the object comprises a step of etching a region of the surface of said object which is not covered with said second photoresist layer.
3. The method of claim 2 , wherein said second photoresist layer and said alignment mark are removed after said pattern has been transferred to said object.
4. The method of claim 2 , wherein said object comprises at least one layer of thin film, and said thin film is patterned by said step of etching.
5. The method of claim 1 , wherein the step of transferring the pattern of the second photoresist layer into the object comprises a step of forming a convex portion in a region of the surface of said object which is not covered with said second photoresist layer.
6. The method of claim 5 , wherein said second photoresist layer and said alignment mark are removed after said pattern has been transferred to said object.
7. The method of claim 1 , wherein the step of transferring the pattern of the second photoresist layer into the object comprises a step of conducting a surface modification treatment for a region of the surface of said object which is not covered with said second photoresist layer.
8. The method of claim 7 , wherein said second photoresist layer and said alignment mark are removed after said pattern has been transferred to said object.
9. The method of claim 1 , wherein said second photoresist layer and said alignment mark are removed after said pattern has been transferred to said object.
10. A method for producing a substrate provided with identification marks, comprising the steps of:
providing a substrate; and
forming a first photoresist layer over the substrate, said first photoresist layer being made of a first material;
forming an alignment mark from said first photoresist layer by removing a portion other than an alignment mark forming portion of said first photoresist layer, the alignment mark being made of the alignment mark forming portion of the first photoresist layer;
forming a second photoresist layer over the substrate so as to cover said alignment mark, said second photoresist layer being made of a second material that is different from the first material;
patterning said second photoresist layer on the basis of said alignment mark;
transferring a pattern of the second photoresist layer into a surface of the substrate; and
removing said second photoresist layer and said alignment mark; wherein
a pattern of the alignment mark is not transferred into the surface of the substrate.
11. The method of claim 10 , wherein said substrate is formed of a ceramic material.
12. A method for manufacturing a ceramic substrate provided with identification marks for use in a magnetic head, comprising the steps of:
providing a ceramic substrate;
forming a first photoresist layer on said ceramic substrate, said first photoresist layer being made of a first material;
forming an alignment mark from said first photoresist layer by removing a portion other than an alignment mark forming portion of said first photoresist layer, the alignment mark being made of the alignment mark forming portion of the first photoresist layer;
covering said alignment mark with a second photoresist layer, said second photoresist layer being made of a second material that is different from the first material;
exposing a region of said second photoresist layer after alignment has been performed on the basis of said alignment mark;
forming a resist mask by subjecting said second photoresist layer to development;
recording identification information on said ceramic substrate by use of said resist mask; and
removing said second photoresist layer and alignment mark; wherein
a pattern of the alignment mark is not transferred into a surface of the ceramic substrate.