IP Library Granted Patent US 6,905,196
Granted Patent B2
US 6,905,196 · App. 10/431,540 · Granted Jun 14, 2005

Polysilicon feed-through fluid drop ejector

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Quick Facts
Patent No.
US 6,905,196
App. No.
10/431,540
Granted
Jun 14, 2005
Kind
B2
Abstract

A fluid ejector includes a fluid channel having a resistive heater and terminating in a nozzle, a common bus formed transverse to the fluid channel and between the resistive heater and the nozzle, a connection line laterally adjacent to the fluid channel, and a connection structure for electrically connecting the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers for electrical connection and a second set of one or more layers for covering the common bus and connection line. The first set of one or more layers includes a doped polysilicon layer on or overlaid by an optional tantalum-silicide layer. The second set of one or more layers includes a nitride layer on or overlaid by a tantalum layer.

Claims (151)

1. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein

the connection line comprises a field oxide layer;

the first set of one or more layers is formed on or over the field oxide layer and comprises a first doped polysilicon layer formed on or over the field oxide layer; and

the first set of one or more layers further comprises a tantalum-silicide layer formed on or over the first doped polysilicon layer.

2. The fluid ejector according to claim 1 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

3. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein the second set of one or more layers is formed on or over the first set of one or more layers and comprises:

a nitride layer formed on or over the first set of one or more layers, and

a tantalum layer formed on or over the nitride layer.

4. The fluid ejector according to claim 3 , wherein:

the connection line comprises a field oxide layer; and

the first set of one or more layers is formed on or over the field oxide layer and comprises a first doped polysilicon layer formed on or over the field oxide layer.

5. The fluid ejector according to claim 4 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

6. The fluid ejector according to claim 3 , wherein the fluid channel is formed on or over a field oxide layer and comprises:

a first set of one or more layers having a first doped polysilicon layer formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer electrically connected with the first doped polysilicon layer; and

a second set of one or more layers formed on or over the first set of one or more layers and the second doped polysilicon layer.

7. The fluid ejector according to claim 6 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

8. The fluid ejector according to claim 3 , wherein the common bus is formed on or over a field oxide layer and comprises:

a first set of one or more layers formed on or over the field oxide layer, and

a second set of one or more layers formed on or over the first set of one or more layers.

9. The fluid ejector according to claim 8 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

10. The fluid ejector according to claim 3 , wherein the common bus is formed on or over a field oxide layer and comprises:

a first set of one or more layers formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer and electrically separated from the first set of one or more layers;

an insulating layer formed on or over the first set of one or more layers and a first portion of the second doped polysilicon layer; and

a second set of one or more layers formed on or over the insulating layer and a second portion of the second doped polysilicon layer.

11. The fluid ejector according to claim 10 , wherein the first set of one or more layers comprises a first doped polysilicon layer formed on or over the field oxide layer.

12. The fluid ejector according to claim 11 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

13. The fluid ejector according to claim 10 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

14. The fluid ejector according to claim 3 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

15. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein the fluid channel is formed on or over a field oxide layer and comprises:

a first set of one or more layers having a first doped polysilicon layer formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer electrically connected with the first doped polysilicon layer; and

a second set of one or more layers formed on or over the first set of one or more layers and the second doped polysilicon layer,

the first set of one or more layers further includes a tantalum-silicide layer formed on or over the first doped polysilicon layer, and

the second set of one or more layers formed on or over the first set of one or more layers is formed on or over the tantalum-silicide layer.

16. The fluid ejector according to claim 15 , wherein the second set of one or more layers comprises:

a nitride layer formed on or over the tantalum-suicide layer and the second doped polysilicon layer; and

a tantalum layer formed on or over the nitride layer.

17. The fluid ejector according to claim 16 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

18. The fluid ejector according to claim 15 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

19. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending alone the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein the first doped polysilicon layer is relatively heavily-doped and the second doped polysilicon layer is relatively lightly-doped, and the fluid channel is formed on or over a field oxide layer and comprises:

a first set of one or more layers having a first doped polysilicon layer formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer electrically connected with the first doped polysilicon layer; and

a second set of one or more layers formed on or over the first set of one or more layers and the second doped polysilicon layer.

20. The fluid ejector according to claim 19 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

21. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein

the first set of one or more layers comprises:

a first doped polysilicon layer formed on or over the field oxide layer; and

the second set of one or more layers comprises:

a nitride layer formed on or over the first doped polysilicon layer; and

a tantalum layer formed on or over the nitride layer.

22. The fluid ejector according to claim 21 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

23. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein

the first set of one or more layers comprises:

a first doped polysilicon layer formed on or over the field oxide layer; and

a tantalum-silicide layer formed on or over the first doped polysilicon layer; and

the second set of one or more layers comprises:

a nitride layer formed on or over the tantalum-silicide layer; and

a tantalum layer formed on or over the nitride layer.

24. The fluid ejector according to claim 23 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

25. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein

the common bus is formed on or over a field oxide layer and comprises:

a first set of one or more layers formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer and electrically senarated from the first set of one or more layers;

an insulating layer formed on or over the first set of one or more layers and a first portion of the second doped polysilicon layer; and

a second set of one or more layers formed on or over the insulating layer and a second portion of the second doped polysilicon layer,

the first set of one or more layers comprises a first doped polysilicon layer formed on or over the field oxide layer, and

the first doped polysilicon layer is relatively heavily-doped and the second doped polysilicon layer is relatively lightly-doped.

26. The fluid ejector according to claim 25 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

27. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein

the common bus is formed on or over a field oxide layer and comprises:

a first set of one or more layers formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer and electrically separated from the first set of one or more layers;

an insulating layer formed on or over the first set of one or more layers and a first portion of the second doped polysilicon layer; and

a second set of one or more layers formed on or over the insulating layer and a second portion of the second doped polysilicon layer, and

the first doped polysilicon layer is relatively thicker than the second doped polysilicon layer.

28. The fluid ejector according to claim 27 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

29. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending alone the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein

the common bus is formed on or over a field oxide layer and comprises:

a first set of one or more layers formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer and electrically separated from the first set of one or more layers;

an insulating layer formed on or over the first set of one or more layers and a first portion of the second doped polysilicon layer; and

a second set of one or more layers formed on or over the insulating layer and a second Portion of the second doped polysilicon layer, and

the first set of one or more layers comprises:

a first doped polysilicon layer formed on or over the field oxide layer; and

a tantalum-suicide layer formed on or over the first doped polysilicon layer.

30. The fluid ejector according to claim 29 , wherein the first doped polysilicon layer is relatively heavily-doped and the second doped polysilicon layer is relatively lightly-doped.

31. The fluid ejector according to claim 30 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

32. The fluid ejector according to claim 29 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

33. A fluid ejector, comprising:

a fluid channel extending in a first direction and having a resistive heater and terminating in a nozzle;

a common bus formed extending in a second direction at an angle to the first direction, the common bus positioned between the resistive heater and the nozzle;

a connection line adjacent to and extending along the fluid channel; and

a connection structure that electrically connects the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers that are electrically conductive and a second set of one or more layers that covers the common bus and the connection line, wherein

the common bus is formed on or over a field oxide layer and comprises:

a first set of one or more layers formed on or over a first portion of the field oxide layer;

a second doped polysilicon layer formed on or over a second portion of the field oxide layer and electrically separated from the first set of one or more layers;

an insulating layer formed on or over the first set of one or more layers and a first portion of the second doped polysilicon layer; and

a second set of one or more layers formed on or over the insulating layer and a second portion of the second doped polysilicon layer, and

the second set of one or more layers comprises:

a nitride layer formed on or over the first set of one or more layers and the second doped polysilicon layer; and

a tantalum layer formed on or over the nitride layer.

34. The fluid ejector according to claim 33 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

35. A fluid ejector, comprising:

a fluid channel having a resistive heater and terminating in a nozzle;

a common bus formed transverse to the fluid channel and between the resistive heater and the nozzle;

a connection line laterally adjacent to the fluid channel;

a connection layer that electrically connects the common bus with the resistive heater and the connection line, including:

a first doped polysilicon layer formed on or over the field oxide layer, and

a tantalum-silicide layer formed on or over the first doped polysilicon layer; and

a cover layer that covers the common bus and the connection line, including:

a nitride layer formed on or over the first set of one or more layers, and

a tantalum layer formed on or over the nitride layer.

36. The fluid ejector according to claim 35 , wherein the resistive heater heats a fluid in the fluid channel for ejecting the fluid through the nozzle.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Sep 7, 2022
From: JPMORGAN CHASE BANK, N.A. AS SUCCESSOR-IN-INTEREST ADMINISTRATIVE AGENT AND COLLATERAL AGENT TO JPMORGAN CHASE BANK
To: XEROX CORPORATION
Reel/Frame 066728/0193 →
SECURITY AGREEMENT Recorded Oct 31, 2003
From: XEROX CORPORATION
To: JPMORGAN CHASE BANK, AS COLLATERAL AGENT
Reel/Frame 015134/0476 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2003
From: SEABRIDGE, SCOTT N.; RAISANEN, ALAN D.; WARNER, SCOTT C; TELLIER, THOMAS A.; BURKE, CATHIE J; HAWKINS, WILLIAM G.
To: XEROX CORPORATION
Reel/Frame 014057/0804 →