Latch circuit for holding detection state of a signal
View Patent ↗A latch circuit is configured so that even if a power-on-reset circuit is not operated in putting a power supply to work, a depletion type MIS transistor is connected as a pull-down element to an output terminal of an RS latch to thereby reliably activate the RS latch in a reset state, whereby a circuit or a semiconductor integrated circuit device is prevented from being unintendedly operated. Furthermore, channel impurities of the depletion type MIS transistor are introduced into only a part, whereby it is possible to realize a semiconductor integrated circuit device which is excellent in safety and which is readily operated with less current consumption and with low cost.
1. A latch circuit comprising: a set input node; a reset input node; an output node; a holding circuit connected to the set input node, the reset input node and the output node; and a depletion mode MIS transistor having a gate electrode, a source electrode connected to the gate electrode, a drain electrode connected to the output node, a source region, a drain region, a channel region extending between the source and drain regions, and a depletion region formed in a portion of the channel region in contact with the source and drain regions, the depletion region comprising an impurity region extending across the channel region in a straight line between the source and drain regions and having smaller width than that of the channel region.
2. A latch circuit comprising: a set input node; a reset input node; an output node; a holding circuit connected to the set input node, the reset input node and the output node; and a depletion mode MIS transistor having a gate electrode, a source electrode connected to the gate electrode, a drain electrode connected to the output node, a source region, a drain region, a channel region extending between the source and drain regions, and a depletion region formed in a portion of the channel region in contact with the source and drain regions, the depletion region comprising an impurity region extending across the channel region in a meandering line between the source and drain regions.
3. A latch circuit comprising: a detecting circuit for detecting a given condition; a flip-flop having a set input terminal connected to an output of the detecting circuit and being set to a given state when the output of the detecting circuit has a given value; a power on reset circuit for releasing the given state when a power supply is turned on; and a depletion mode MIS transistor having a gate electrode, a source electrode connected to the gate electrode, a drain electrode connected to the output node, a source region, a drain region, a channel region extending between the source and drain regions, and a depletion region formed in a portion of the channel region in contact with the source and drain regions, the depletion region comprising an impurity region extending across the channel region in a straight line between the source and drain regions and having smaller width than that of the channel region.
4. A latch circuit comprising: a detecting circuit for detecting a given condition; a flip-flop having a set input terminal connected to an output of the detecting circuit and being set to a given state when the output of the detecting circuit has a given value; a power on reset circuit for releasing the given state when a power supply is turned on; and a depletion mode MIS transistor having a gate electrode, a source electrode connected to the gate electrode, a drain electrode connected to the output node, a source region, a drain region, a channel region extending between the source and drain regions, and a depletion region formed in a portion of the channel region in contact with the source and drain regions, the depletion region comprising an impurity region extending across the channel region in a meandering line between the source and drain regions.
5. A latch circuit comprising: a detecting circuit for detecting a temperature and indicating whether the detected temperature is above or lower than a specific value; a set input node connected to an output of the detecting circuit; a reset input node; an output node; a holding circuit comprising a flip-flop circuit having a set input terminal connected to the set input node, a reset input terminal connected to the reset input node, and an output terminal connected the output node; and a depletion mode MIS transistor having a gate electrode, a source electrode connected to the gate electrode, a drain electrode connected to the output node.