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App. No. 10/435,230 · Confirmation No. 1238

SELF-ALIGNED PROCESS USING INDIUM GALLIUM ARSENIDE ETCHING TO FORM REENTRY FEATURE IN HETEROJUNCTION BIPOLAR TRANSISTORS

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Quick Facts
App. No.
10/435,230
Filed
2003-05-09
Granted
2004-10-19
Pub. No.
US20040224460A1
Examiner
HUYNH, ANDY
Art Unit
2818
PTA
0 days