Solid state lasers and a method for their production
The present invention relates to a solid-state laser comprising: a) a semiconductor pump laser, b) a lens integrated on the surface of said semiconductor pump laser, c) a packaging material consisting essentially of a spin-on glass material, wherein the spin-on glass material is processable at a process temperature of less than 225° C., and d) a lasing material layer having a highly reflective coating in both sides. The invention also relates to a process for producing such a solid-state laser, which process comprises applying spin-on glass material onto semiconductor wafers having VCSEL pump lasers using different coating methods, such as spin coating, and curing the glass film layer at temperatures <225° C.; printing desired patterning of the material by contact or proximity lithography methods and forming diffractive lens structures to shape the pump laser radiation into the lasing material which constitutes spin-on glass material doped with rare earth elements, such as erbium (Er) and ytterbium (Yb), or with semiconductor nano-particles or quantum dots.
1. A solid-state laser consisting essentially of: a) a semiconductor pump laser, b) a micro-lens integrated on the surface of said semiconductor pump laser, said pump laser capable of focusing a beam in a location where the lasing layer of d) is to be positioned, c) a packaging material positioned over b) in a manner that creates required spacing for the pump beam to efficiently focus the pump beam in the lasing region, said packaging material consisting essentially of a spin-on glass (SOG) material, wherein the spin-on glass material is processable at a process temperature of less than 225° C. and d) a lasing material layer having a highly reflective coating in both sides, said lasing layer positioned over said spin-on-glass packaging material.
2. The solid-state laser of claim 1 , wherein the lasing material is capable of being pumped by an array of VCSELs at the wavelength that excites the lasing material.
3. The solid-state laser of claim 1 , wherein the lasing material layer is a pre-determined waveguide.
4. The solid-state laser of claim 1 , wherein the lasing material layer is a waveguide formed through the intensity of the pump laser.
5. The solid-state laser of claim 1 , wherein a micro-lens array capable of beam shaping is incorporated on the top layer of solid-state material.
6. The solid state laser of claim 1 , wherein the semiconductor pump laser is a vertical cavity surface-emitting layer.
7. The solid-state laser of claim 6 , wherein an electro-optic loyer is placed in the cavity of the solid-state laser, wherein said electro-optic layer is capable of modulating intensity and wavelength.