IP Library Granted Patent US 7,399,449
Granted Patent B1
US 7,399,449 · App. 10/436,595 · Granted Jul 15, 2008

Microfabricated diffusion source

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Quick Facts
Patent No.
US 7,399,449
App. No.
10/436,595
Granted
Jul 15, 2008
Kind
B1
Abstract

A microfabricated diffusion source to provide for a controlled diffusion rate of a vapor comprises a porous reservoir formed in a substrate that can be filled with a liquid, a headspace cavity for evaporation of the vapor therein, a diffusion channel to provide a controlled diffusion of the vapor, and an outlet to release the vapor into a gas stream. The microfabricated diffusion source can provide a calibration standard for a microanalytical system. The microanalytical system with an integral diffusion source can be fabricated with microelectromechanical systems technologies.

Claims (18)

1. A microfabricated diffusion source to provide a controlled diffusion rate of a vapor, comprising:

a substrate having a hollow cavity formed therein,

a lid bonded to the cavity-side of the substrate to enclose the hollow cavity,

a porous reservoir formed in the cavity of the substrate to hold a liquid,

a headspace formed in the cavity in fluidic communication with the porous reservoir to provide an equilibrium vapor of the liquid therein,

a diffusion channel, having a cross-section, a length, an entrance end in fluidic communication with the headspace and an exit end for controlled diffusion of the vapor therethrough, wherein the cross-section and length are selected so that the diffusion rate of the vapor through the diffusion channel is in the molecular flow regime and wherein the diffusion rate R of the vapor through the diffusion channel in the molecular flow regime is given approximately by R=2.216×10 6 (DMPA/TL) log [P/(P−P v )], where D is the vapor diffusion coefficient (cm 2 /sec), M is the vapor molecular weight (g/mol), P is the atmospheric pressure (Torr), A is the diffusion channel cross-section (cm 2 ), T is the source temperature (° K), L is the diffusion channel length (cm), and P v is the partial pressure of the diffusing vapor (Torr), and

an outlet formed through the lid at the exit end of the diffusion channel for release of the vapor to a gas stream.

2. The microfabricated diffusion source of claim 1 , further comprising an intermediate layer disposed between the substrate and the lid, wherein the headspace is formed through the intermediate layer.

3. The microfabricated diffusion source of claim 1 , wherein the substrate further comprises an inlet for filling of the porous reservoir with the liquid.

4. The microfabricated diffusion source of claim 1 , further comprising means for controlling the temperature of the microfabricated diffusion source.

5. The microfabricated diffusion source of claim 4 , wherein the temperature controlling means comprises a resistive heating element deposited on the outer side of the substrate.

6. The microfabricated diffusion source of claim 1 , wherein the substrate comprises silicon.

7. The microfabricated diffusion source of claim 6 , wherein the porous reservoir comprises porous silicon.

8. The microfabricated diffusion source of claim 7 , wherein the porous silicon is formed by electrochemical etching in doped single-crystal silicon.

9. The microfabricated diffusion source of claim 1 , wherein the porous reservoir has a pore radius of less than 10 microns.

10. The microfabricated diffusion source of claim 1 , wherein the diffusion channel is formed in the substrate.

11. The microfabricated diffusion source of claim 1 , wherein the diffusion channel is formed in the lid.

12. The microfabricated diffusion source of claim 2 , wherein the diffusion channel is formed in the intermediate layer.

Assignments (2)
CHANGE OF NAME Recorded Jan 9, 2018
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 045029/0366 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 12, 2003
From: OBORNY, MICHAEL C.; FRYE-MASON, GREGORY C.; MANGINELL, RONALD P.
To: SANDIA CORPORATION
Reel/Frame 013869/0245 →