Trench mosfet with field relief feature
View Patent ↗A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing.
1. A MOS-gated device comprising:
a substrate of a first conductivity type;
a trench receiving layer which includes a common conduction region of said first conductivity type, and a base region of a second conductivity type formed over said common conduction region;
a plurality of trenches formed to extend below said base region, each trench including a gate insulation layer disposed on at least one side wall thereof and filled with a conductive gate material;
a plurality of source regions each adjacent a respective trench;
a plurality of highly conductive contact regions formed in said base region; and
a plurality of field relief regions of said second conductivity formed in said common conduction region and extending to a depth below said base region; wherein each said field relief region is lightly doped, spaced from said base region and said trenches, and aligned with a respective highly conductive contact region, and wherein each of said highly conductive contact regions is formed at the bottom of a respective recess in said base region, and wherein a source region is located at a respective sidewall of each recess.
2. A device according to claim 1 , further comprising a source contact in ohmic contact with said source regions.
3. A device according to claim 1 , further comprising a drain contact in ohmic contact with said substrate.
4. A device according to claim 1 , further comprising another plurality of field relief regions formed in said common conduction region at a depth below said depth of said plurality of field relief regions.
5. A MOS-gated device comprising:
a substrate;
a trench receiving layer which includes a common conduction region of said first conductivity type, and a channel region of a second conductivity type formed over said common conduction region;
a plurality of trenches formed to extend below said channel region, each trench including a gate insulation layer disposed on at least one side wall thereof and filled with a conductive gate material;
a plurality of conductive regions of said first conductivity each adjacent a respective trench;
a plurality of highly conductive contact regions formed in said channel region; and
a plurality of field relief regions of said second conductivity formed in said common conduction region and extending to a depth below said channel region; wherein each said field relief region is lightly doped, spaced from said base region and said trenches, and aligned with a respective highly conductive contact region, and wherein each of said highly conductive contact regions of said second conductivity is formed at the bottom of a respective recess formed in said base region, and wherein a region of said first conductivity is located at a respective sidewall of each recess.
6. A device according to claim 5 , further comprising a first contact in ohmic contact with said conductive regions of said first conductivity.
7. A device according to claim 6 , wherein said first contact is a source contact.
8. A device according to claim 5 , wherein said conductive regions of said first conductivity are source regions.
9. A device according to claim 5 , further comprising a second contact in ohmic contact with said substrate.
10. A device according to claim 9 , wherein said second contact is a drain contact.
11. A device according to claim 5 , further comprising another plurality of field relief regions formed at a depth below said plurality of field relief regions.
12. A MOS-gated device comprising:
a substrate of a first conductivity type;
a trench receiving layer which includes a common conduction region of said first conductivity type, and a base region of a second conductivity type formed over said common conduction region;
a plurality of trenches formed to extend below said base region, each trench including a gate insulation layer disposed on at least one side wall thereof and filled with a conductive gate material;
a plurality of source regions each adjacent a respective trench;
a plurality of highly conductive contact regions formed in said base region; and
a plurality of field relief regions of said second conductivity formed in said common conduction region and extending to a depth below said base region; wherein each said field relief region is lightly doped, spaced from said base region and said trenches, and aligned with a respective highly conductive contact region.
13. A device according to claim 12 , further comprising a drain contact in ohmic contact with said substrate.
14. A device according to claim 12 , further comprising another plurality of field relief regions formed in said common conduction region at a depth below said depth of said plurality of field relief regions.
15. A device according to claim 12 , further comprising a first contact in ohmic contact with said source.