Multi energy x-ray imager
View Patent ↗An X-ray image acquisition apparatus includes a panel having a first electrode, a second electrode, and a photoconductor secured between said first and second electrodes. The photoconductor has a thickness configured to absorb X-ray radiation at a high energy level. The first and second electrodes are configured to create an electric field for transporting charges created in the photoconductor to a pixel unit, thereby allowing charges to be efficiently collected when low or high energy X-ray radiation is used.
1. An X-ray image acquisition apparatus, comprising:
a panel having a first electrode, a second electrode, and a photoconductor secured between said first and second electrodes, said photoconductor being made from a material that comprises a heavy element, wherein said first and second electrodes create an electric field for transporting charges created in the photoconductor, said photoconductor configured to absorb X-ray radiation at an energy level that is higher than 1000 kilo-electron-volts; and
an array of detector elements adjacent the panel, at least one of the detector elements having a switching element coupled to the second electrode.
2. The X-ray image acquisition apparatus of claim 1 , wherein said photoconductor is made from a material selected from the group consisting of Lead Iodide, Cesium Iodide, Mercuric Iodide, Bismuth Iodide, and Cadmium Zinc Telluride.
3. The X-ray image acquisition apparatus of claim 1 , wherein said first electrode is pixellated.
4. The X-ray image acquisition apparatus of claim 1 , wherein said photoconductor comprises a single crystalline layer.
5. The X-ray image acquisition apparatus of claim 1 , wherein said photoconductor comprises a poly-crystalline layer.
6. The X-ray image acquisition apparatus of claim 1 , wherein said photoconductor is adapted for absorbing X-ray radiation at a plurality of energy levels within a range between approximately 10 kilo-electron-volts and approximately 20 Mega-electron-volts.
7. The X-ray image acquisition apparatus of claim 1 , wherein said photoconductor is adapted for absorbing high X-ray radiation energy and low X-ray radiation energy.
8. The X-ray image acquisition apparatus of claim 1 , wherein said first electrode comprises a build-up layer.
9. The X-ray image acquisition apparatus of claim 8 , wherein said build-up layer comprises a material selected from the group consisting of copper, tungsten, and gold.
10. The X-ray image acquisition apparatus of claim 8 , wherein said photoconductor has a thickness greater than about 100 microns.
11. The X-ray image acquisition apparatus of claim 1 , further comprising a build-up layer secured to said first electrode.
12. The X-ray image acquisition apparatus of claim 11 , wherein said photoconductor has a thickness greater than about 100 microns.
13. The X-ray image acquisition apparatus of claim 1 , wherein said photoconductor has a thickness greater than about 1 mm.
14. The X-ray image acquisition apparatus of claim 1 , wherein the switching element comprises a thin film transistor.
15. The X-ray image acquisition apparatus of claim 1 , wherein the switching element comprises a switching diode.
16. The X-ray image acquisition apparatus of claim 1 , wherein the switching element comprises a polycrystalline silicon.
17. The X-ray image acquisition apparatus of claim 1 , wherein the switching element comprises an organic active element.
18. An X-ray image acquisition apparatus, comprising:
a panel having a first electrode, a second electrode, and a photoconductor secured between said first and second electrodes, said photoconductor being made from a material that comprises a heavy element; and
an array of detector elements adjacent the panel, at least one of the detector elements having a switching element coupled to the second electrode;
wherein said first and second electrodes create an electric field for transporting charges created in the photoconductor, said photoconductor having a thickness configured to absorb X-ray radiation at a high energy level, wherein said photoconductor has a thickness greater than 1 mm.
19. The X-ray image acquisition apparatus of claim 18 , wherein the high energy level is at least 160 kilo-electron-volts.
20. The X-ray image acquisition apparatus of claim 19 , wherein said photoconductor is configured to absorb X-ray radiation at an energy level that is higher than 1000 kilo-electron-volts.
21. The X-ray image acquisition apparatus of claim 18 , wherein said photoconductor is adapted for absorbing X-ray radiation at a plurality of energy levels within a range between approximately 10 kilo-electron-volts and approximately 20 Mega-electron-volts.
22. The X-ray image acquisition apparatus of claim 18 , wherein said photoconductor is adapted for absorbing high X-ray radiation energy and low X-ray radiation energy.
23. A method for creating a X-ray image, comprising:
providing a photoconductor, said photoconductor having a thickness configured to absorb X-ray radiation at an energy level that is higher than 1000 kilo-electron-volts;
generating an electric field within said photoconductor to thereby transport charges to an electrode; and
using a detector array to access a signal from the electrode, the detector array having at least one switching element.
24. The method of claim 23 , further comprising absorbing low energy X-ray radiation using said photoconductor.
25. The method of claim 23 , further comprising absorbing high energy X-ray radiation using said photoconductor.
26. The method of claim 23 , wherein said generating comprises creating a potential difference between a first electrode located on one side of said photoconductor and a second electrode located on another side of said photoconductor.
27. The method of claim 23 , further comprising:
producing an electron hole pair within said photoconductor; and
collecting a charge of said electron hole pair.
28. The method of claim 27 , further comprising:
creating a signal based on said collecting;
processing said signal; and
generating an image based on said processing.
29. The method of claim 23 , wherein the switching element comprises a thin film transistor.
30. The method of claim 23 , wherein the switching element comprises a switching diode.
31. A method for creating one or more X-ray images, comprising:
providing a panel having a first electrode, a second electrode, and a photoconductor secured between said first and second electrodes;
using said photoconductor to absorb X-ray radiation at a first energy level for creating a first image; and
using said photoconductor to absorb X-ray radiation at a second energy level for creating a second image;
wherein each of said first and said second energy levels is a value that is between 10 kilo-electron-volts and 20 Mega-electron-volts, and at least one of said first and said second energy levels is at least 160 kilo-electron volts.
32. The method of claim 31 , wherein said photoconductor has a thickness greater than about 1 mm.
33. The method of claim 31 , wherein said photoconductor is made from a material selected from the group consisting of Lead Iodide, Cesium Iodide, Mercuric Iodide, Bismuth Iodide, and Cadmium Zinc Telluride.
34. The method of claim 31 , wherein said photoconductor comprises a single crystalline layer.
35. The method of claim 31 , wherein said photoconductor comprises a poly-crystalline layer.
36. The method of claim 31 , wherein said at least one of said first and said second energy levels is higher than 1000 kilo-electron volts.