IP Library Granted Patent US 7,014,979
Granted Patent B2
US 7,014,979 · App. 10/440,273 · Granted Mar 21, 2006

Organometallic precursor mixture for forming metal alloy pattern and method of forming metal alloy pattern using the same

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Quick Facts
Patent No.
US 7,014,979
App. No.
10/440,273
Granted
Mar 21, 2006
Kind
B2
Abstract

An organometallic precursor mixture for forming a metal alloy pattern and a method of forming the metal alloy pattern using the same, wherein the metal alloy pattern having improved adhesive force to a substrate, heat resistance, and resistance to atmospheric corrosion can be readily formed using the organometallic precursor mixture by and exposing step without using a separate photosensitive resin.

Claims (33)

1. An organometallic precursor mixture for forming a metal alloy pattern, produced by mixing a compound defined by the following Formula (I) with another compound defined by the following Formula (II) in a metal weight ratio of 99.99:0.01 to 80:20:

M m L n X p   (I)

wherein,

M is a transition metal selected from the group consisting of Ag, Au, and Cu;

L is a neutral ligand selected from the group consisting of amines, phosphines, phosphites, phosphine oxides, arsines, and thiols; and

X is an anion selected from the group consisting of halogen, hydroxide (OH − ), cyanide (CN − ), nitrite (NO 2 − ), nitrate (NO 3 − ), nitroxyl (NO − ), azide (N 3 − ), thiocyanato, isothiocyanato, tetralkylborate, tetrahaloborate, hexafluorophosphate (PF 6 − ), triflate (CF 3 SO 3 − ), tosylate (Ts − ), sulfate (SO 4 2− ), and carbonate (CO 3 2− );

wherein

m is an integer ranging from 1 to 10;

n is an integer ranging from 1 to 40; and

p is an integer ranging from 0 to 10;

R′ a D(CH 2 ) b M′(OR″) 3   (II)

wherein,

M′ is a main group element selected from the group consisting of Si, Ge, and Sn;

D is a donor atom selected from the group consisting of N, P, O, and S;

R′ is a hydrogen atom, an alkyl group with 1 to 5 carbons or a functional group with 1 to 5 carbons containing N or O;

R″ is a linear alkyl group with 1 to 10 carbons or a branched alkyl group with 4 to 10 carbons;

a is an integer ranging from 1 to 2; and

b is an integer ranging from 0 to 5.

2. A method of forming a metal alloy pattern, comprising the steps of:

(a) dissolving the organometallic precursor mixture according to claim 1 in an organic solvent to provide a coating solution;

(b) applying the coating solution to a substrate to form a thin film of the organometallic precursor on the substrate;

(c) exposing the thin film with the use of a photomask; and

(d) developing the exposed thin film to form a metal alloy or a metal alloy oxide pattern on the substrate.

3. The method according to claim 2 , wherein the substrate is made of a material selected from the group consisting of an inorganic material, an organic material, and a composite thereof.

4. The method according to claim 2 , wherein the coating step is conducted according to a spin coating process, a roll coating process, a dip coating process, a spray coating process, a flow coating process, or a screen printing process.

5. The method according to claim 2 , wherein the organic solvent is selected from the group consisting of a nitrile-based solvent, an aliphatic hydrocarbon-based solvent, an aromatic hydrocarbon-based solvent, a ketone-based solvent, an ether-based solvent, an acetate-based solvent, an alcohol-based solvent, a silicone-based solvent, and mixtures thereof.

6. The method according to claim 2 , wherein the exposing step is conducted using ultraviolet light as the light source.

7. The method according to claim 2 , further comprising the steps of oxidizing, reducing, and/or annealing the metal alloy or metal alloy oxide pattern after the developing step (d).

8. The method according to claim 7 , wherein the annealing step is conducted under a mixed gas atmosphere of H 2 /N 2 , N 2 gas, air or a vacuum at a temperature of 300° C. or lower.

9. The method according to claim 2 , wherein step (b) to the step (d) are repeated twice or more to form a multi-layered metal alloy pattern.

10. The method according to claim 9 , wherein a metal substantially constituting a first metal alloy pattern layer is different from the metal substantially constituting other metal alloy pattern layers.

11. The method according to claim 7 , wherein the oxidizing is performed using trimethylamine N-oxide, pyridine N-oxide, bis(trimethylsilyl) oxide, perbenzoic acid, O 3 , O 2 , H 2 O 2 , H 2 SO 4 or HNO 3 .

12. The method according to claim 7 , wherein the reducing is performed using hydrazines, silanes, amines, NaBH 4 or LiAlH 4 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028984/0774 →