Semiconductor washing solution and method of producing semiconductor device using the same
View Patent ↗The invention provides a semiconductor washing solution which can suppress occurrence of variation of the shape of a semiconductor device when the semiconductor device is washed and can maintain a stabilized washing capacity for a long period of time. An organic acid ammonium salt is added to a mixed solution of ammonium hydroxide, hydrogen peroxide and water (NH 4 OH:H 2 O 2 :H 2 O) to prepare the semiconductor washing solution. The organic acid ammonium salt to be added is one or more selected from ammonium acetate, ammonium citrate, ammonium formate and ammonium oxalate. The concentration of the added organic acid ammonium salt ranges from 0.1 mol/l to 20 mol/l.
1. A semiconductor washing solution, including an organic acid ammonium salt having a concentration of about 5 mol/l to about 20 mol/l, ammonium hydroxide, hydrogen peroxide and water, wherein the composition ratio of ammonium hydroxide, hydrogen peroxide and water is NH 4 OH:H 2 O 2 :H 2 O=y:x:20, and wherein x=0.01 to 5 and y=0.1 to 4.
2. The semiconductor washing solution as claimed in claim 1 , wherein the organic acid ammonium salt is one or more selected from ammonium acetate, ammonium citrate, ammonium formate and ammonium oxalate.
3. The semiconductor washing fluid as claimed in claim 1 , wherein the organic acid ammonium salt concentration is about 10 to about 20 mol/l.
4. The semiconductor washing fluid as claimed in claim 2 , wherein the organic acid ammonium salt is ammonium acetate or ammonium citrate.
5. A semiconductor washing solution including ammonium acetate having a concentration of about 5 mol/l to about 20 mol/l, ammonium hydroxide, hydrogen peroxide and water, wherein the composition ratio of ammonium hydroxide, hydrogen peroxide and water is NH 4 OH:H 2 O 2 :H 2 O=x:y:20, and wherein x=0.01 to 5 and y=0.1 to 4.
6. A process for fabricating a semiconductor device, the process comprising:
forming a semiconductor substrate having an insulation layer by depositing a non-doped oxide film and a doped oxide film, said non-doped oxide film and said doped oxide film defining a contact hole that exposes said non-doped oxide film and said doped oxide film;
providing a semiconductor washing liquid that includes an organic ammonium salt having a concentration of about 5 mol/l to about 20 mol/l, ammonium hydroxide, hydrogen peroxide and water, wherein the composition ratio of ammonium hydroxide, hydrogen peroxide and water is NH 4 OH:H 2 O 2 :H 2 O=x:y:20, and wherein x=0.01 to 5 and y=0.1 to 4; and
washing said non-doped oxide film and said doped oxide film with said washing liquid to etch the exposed portions of said non-doped oxide film and said doped oxide film.
7. The fabrication process as set forth in claim 6 , wherein said washing step is performed by maintaining a temperature of said washing liquid within a range of 30° C. to 60° C.
8. The fabrication process as set forth in claim 6 , wherein said washing step is performed with an application of an ultrasonic vibration.
9. The fabrication process as set forth in claim 6 , wherein the organic acid ammonium salt is one or more selected from ammonium acetate, ammonium citrate, ammonium formate and ammonium oxalate.