Low power thermoelectric generator
View Patent ↗Disclosed is a foil segment for a thermoelectric generator comprising a top plate disposed in spaced relation above a bottom plate. An array of the foil segments is perpendicularly disposed in side-by-side arrangement between and in thermal contact with the bottom and top plates. Each foil segment comprises a substrate having a thickness of about 7.5-50 microns, opposing front and back substrate surfaces and a series of spaced alternating n-type and p-type thermoelectric legs disposed in parallel arrangement on the front substrate surface. Each of the n-type and p-type legs is formed of a bismuth telluride-based thermoelectric material having a thickness of about 5-100 microns, a width of about 10-100 microns and a length of about 100-500 microns. The alternating n-type and p-type thermoelectric legs are electrically connected in series and thermally connected in parallel such that a temperature differential between the bottom and top plates results in the generation of power.
1. A foil segment for a thermoelectric generator, the foil segment comprising:
a substrate having opposing front and back substrate surfaces; and
a series of elongate alternating n-type and p-type thermoelectric legs disposed in spaced parallel arrangement on the front substrate surface, each of the n-type and p-type legs being formed of a Bi 2 Te 3 -type thermoelectric material having a thickness in the range of from about 5 microns to about 100 microns, each n-type and p-type thermoelectric leg having a width and a length, the width being in the range of from about 10 microns to about 100 microns, the length being in the range of from about 100 microns to about 500 microns; wherein:
each one of the p-type thermoelectric legs is electrically connected to an adjacent one of the n-type thermoelectric legs at opposite ends of the p-type thermoelectric legs such that the series of n-type and p-type thermoelectric legs are electrically connected in series and thermally connected in parallel;
the Bi 2 Te 3 -type thermoelectric material for the p-type thermoelectric legs being a semiconductor compound having the following formula:
(Bi 0.15 Sb 0.85 ) 2 Te 3 plus about 10 at % Te excess to about 30 at % Te excess.
2. The foil segment of claim 1 wherein the semiconductor compound has about 18 at % Te excess.
3. The foil segment of claim 1 wherein each one of the p-type thermoelectric legs has a width of about 40 microns.
4. A foil segment for a thermoelectric generator, the foil segment including a plurality of n-type and p-type thermoelectric legs, each one of the p-type thermoelectric legs being formed of a semiconductor compound having the following formula:
(Bi 0.15 Sb 0.85 ) 2 Te 3 plus about 10 at % Te excess to about 30 at % Te excess.
5. The foil segment of claim 4 wherein the semiconductor compound has about 18 at % Te excess.
6. A foil segment for a thermoelectric generator, the foil segment comprising:
a substrate having a thickness in the range of from about 7.5 microns to about 50 microns and including opposing front and back substrate surfaces, the substrate formed of an electrically insulating material having a low thermal conductivity; and
a series of spaced alternating n-type and p-type thermoelectric legs disposed in parallel arrangement on each one of the front substrate surfaces, each of the n-type and p-type legs being formed of a Bi 2 Te 3 -type thermoelectric material and having a thickness in the range of from about 5 microns to about 100 microns, each n-type and p-type thermoelectric leg having a width and a length, the width being in the range of from about 10 microns to about 100 microns and the length being in the range of from about 100 microns to about 500 microns; wherein:
each one of the p-type thermoelectric legs is electrically connected to adjacent n-type thermoelectric legs at opposite ends of the p-type thermoelectric legs such that the series of n-type arid p-type thermoelectric legs are electrically connected in series and thermally connected in parallel;
each one of the p-type thermoelectric legs being formed of a semiconductor compound having the following formula:
(Bi 0.15 Sb 0.85 ) 2 Te 3 plus about 18 at % Te excess.