Tuned bandwidth photocathode for transmission negative electron affinity devices
View Patent ↗A photocathode includes a first layer having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength, a second layer having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength, and a third layer having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength. The first wavelength is shorter than the second wavelength. The first, second and third layers are positioned in sequence between input and output sides of the photocathode.
1. A photocathode having input and output sides comprising
a first layer of semiconductor material having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength,
a second layer of semiconductor material having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength,
a third layer of semiconductor material having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength, the first wavelength shorter than the second wavelength,
the first, second and third layers are positioned in sequence between the input and output sides, and
the first and second wavelengths, respectively, define first and second cutoff spectral response wavelengths, forming a predetermined tuned bandwidth.
2. The photocathode of claim 1 wherein
the first, second and third layers each includes an alloy of Al x Ga 1-x As, in which a sum of x and 1−x equals a value of 1, and
the value of x for each of the alloys of the first, second and third layers is different.
3. The photocathode of claim 2 wherein
the value of x for the first layer varies between 0.05 and 0.9,
the value of x for the second layer varies between 0.1 and 1.0, and
the value of x for the third layer varies between 0.00 and 0.4.
4. The photocathode of claim 2 wherein
the value of x for the alloy of the first layer has a value of 0.35,
the value of x for the alloy of the second layer has a value of 1.00, and
the value of x for the alloy of the third layer has a value of 0.08.
5. The photocathode of claim 2 wherein
a first thickness of the first layer varies between 0.05 and 5 microns,
a second thickness of the second layer varies between 0.01 and 0.1 microns, and
a third thickness of the third layer varies between 0.5 and 5 microns.
6. The photocathode of claim 2 wherein
the first thickness is greater than or equal to 3/α 1 (λ), where α 1 (λ) is an absorption coefficient of the first layer at an input wavelength of λ,
the second thickness is thicker than an electron tunneling thickness of the second layer, and
the third thickness is less than 3×L 3 , where L 3 is an electron diffusion length of the third layer.
7. The photocathode of claim 1 including a glass faceplate positioned between the input side and the first layer.
8. The photocathode of claim 7 wherein
the glass faceplate includes an anti-reflection coating (ARC) layer, the ARC layer abutting the first layer.
9. The photocathode of claim 1 including
a negative electron affinity (NEA) layer positioned between the third layer and the output side.
10. The photocathode of claim 1 wherein
the first wavelength is approximately 650 nm, and
the second wavelength is approximately 850 nm.
11. The photocathode of claim 1 wherein
the first, second and third layers each includes an alloy of In x Ga 1-x P, in which a sum of x and 1−x equals a value of 1, and
the value of x for each of the alloys of the first, second and third layers is different.
12. The photocathode of claim 11 wherein
the value of x for the first layer varies between 0.4 and 0.6,
the value of x for the second layer varies between 0.5 and 0.00, and
the value of x for the third layer varies between 0.00 and 0.3.
13. An image intensifier, receiving light from an image at an input side and outputting light of the image at an output side, the imaging intensifier comprising:
a photocathode, positioned at the input side, including
(a) a first layer of semiconductor material having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength,
(b) a second layer of semiconductor material having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength,
(c) a third layer of semiconductor material having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength, the first wavelength shorter than the second wavelength, and
(d) the first, second and third layers are positioned in sequence from the input side;
an imaging device positioned at the output side; and
a microchannel plate positioned between the photocathode and the imaging device;
wherein the image intensifier provides a tuned spectral response with the first and second wavelengths defining cutoff wavelengths of the spectral response.
14. The image intensifier of claim 13 wherein
the first energy band gap, the second energy band gap, and the third energy band gap are adjusted to provide the cutoff wavelengths of the spectral response.
15. The image intensifier of claim 14 wherein the spectral response is tuned to an active light source impinging an object to form the image received by the image intensifier.
16. The image intensifier of claim 15 wherein the active light source is one of a CW laser light source and a modulated laser light source.
17. The image intensifier of claim 14 wherein the spectral response is tuned to an image formed by fluorescence emission characteristic of a compound or a group of compounds.