Optically pumped semiconductor laser device
View Patent ↗An optically pumped semiconductor laser device having a substrate ( 1 ) having a first main area ( 2 ) and a second main area ( 3 ), with at least one pump laser ( 11 ) being arranged on the first main area ( 2 ). The semiconductor laser device comprises a vertically emitting laser ( 4 ) having a resonator having a first mirror ( 9 ) being arranged on the side of the first main area ( 2 ) and a second mirror ( 20 ) being arranged on the side of the second main area ( 3 ) of the substrate ( 1 ).
1. An optically pumped semiconductor laser device, comprising:
a substrate having a first main area and a second main area; and
at least one pump laser arranged on the first main area;
wherein the semiconductor laser device has a vertically emitting laser having a resonator having a first mirror and a second mirror, said laser being optically pumped by the at least one pump laser, the first mirror being arranged on the side of a first main area and the second mirror being arranged on the second main area of the substrate.
2. The semiconductor laser device as claimed in claim 1 , wherein radiation generated by the vertically emitting laser is coupled out through the second mirror.
3. The semiconductor laser device as claimed in claim 1 , wherein the second main area is parallel to the first main area.
4. The semiconductor laser device as claimed in claim 1 , wherein the vertically emitting laser and the at least one pump laser are monolithically integrated.
5. The semiconductor laser device as claimed in claim 1 , wherein a lens is arranged between the second mirror and the first mirror.
6. The semiconductor laser device as claimed in claim 1 , wherein the second mirror has a curved configuration.
7. The semiconductor laser device as claimed in claim 1 , wherein the first mirror is configured as a Bragg mirror.
8. The semiconductor laser device as claimed in claim 1 , wherein the second mirror is configured as a Bragg mirror or as a dielectric mirror.
9. The semiconductor laser device as claimed in claim 1 , wherein the semiconductor laser device is formed from an undoped semiconductor material at least partly in a region of the vertically emitting laser.
10. The semiconductor laser device as claimed in claim 1 , wherein the substrate is undoped.
11. The semiconductor laser device as claimed in claim 1 , wherein the vertically emitting laser has a radiation-emitting active layer configured as a quantum well structure.
12. The semiconductor laser device as claimed in claim 1 , wherein radiation generated by the at least one pump laser for pumping the vertically emitting laser is coupled in a lateral direction into the vertically emitting laser or a quantum well structure.
13. The semiconductor laser device as claimed in claim 1 , wherein a thickness of the substrate is greater than 100 μm.
14. The semiconductor laser device as claimed in claim 13 , wherein the thickness of the substrate is greater than 200 μm.
15. The semiconductor laser device as claimed in claim 13 , wherein the thickness of the substrate is greater than 500 μm.
16. An optically pumped semiconductor laser device comprising:
a substrate having a first main area and a second main area; and
at least one pump laser arranged on the first main area;
wherein the semiconductor laser device has a vertically emitting laser having a resonator having a first mirror and a second mirror, said laser being optically pumped by the at least one pump laser, the first mirror being arranged on a side of the first main area, a recess or a perforation running from the first to the second main area being formed in the substrate, and the second mirror being arranged within the recess or the perforation.
17. The semiconductor laser device as claimed in claim 16 , wherein radiation generated by the vertically emitting laser is coupled out through the second mirror.
18. The semiconductor laser device as claimed in claim 16 , wherein the second main area is parallel to the first main area.
19. The semiconductor laser device as claimed in claim 16 , wherein the vertically emitting laser and the at least one pump laser are monolithically integrated.
20. The semiconductor laser device as claimed in claim 16 , wherein a lens is arranged between the second mirror and the first mirror.
21. The semiconductor laser device as claimed in claim 16 , wherein the second mirror has a curved configuration.
22. The semiconductor laser device as claimed in claim 16 , wherein the first mirror is configured as a Bragg mirror.
23. The semiconductor laser device as claimed in claim 16 , wherein the second mirror is configured as a Bragg mirror or as a dielectric mirror.
24. The semiconductor laser device as claimed in claim 16 , wherein the semiconductor laser device is formed from an undoped semiconductor material at least partly in a region of the vertically emitting laser.
25. The semiconductor laser device as claimed in claim 16 , wherein the substrate is undoped.
26. The semiconductor laser device as claimed in claim 16 , wherein the vertically emitting laser has a radiation-emitting active layer that is configured as a quantum well structure.
27. The semiconductor laser device as claimed in claim 16 , wherein radiation generated by the at least one pump laser for pumping the vertically emitting laser is coupled in the lateral direction into the vertically emitting laser or a quantum well structure.
28. The semiconductor laser device as claimed in claim 16 , wherein a thickness of the substrate is greater than 100 μm.
29. The semiconductor laser device as claimed in claim 26 , wherein the thickness of the substrate is greater than 200 μm.
30. The semiconductor laser device as claimed in claim 26 , wherein the thickness of the substrate is greater than 500 μm.