Sub-flux quantum generator
View Patent ↗A sub-flux quantum generator includes an N-turn ring having a plurality of connected turns about a common aperture. The width of each respective turn in the N-turn ring exceeds the London penetration depth of a superconducting material used to make the respective turn. The generator includes a switching device configured to introduce a reversible localized break in the superconductivity of at least one turn in the N-turn ring. The generator includes a magnetism device configured to generate a magnetic field within the aperture of the N-turn ring. A method for biasing a superconducting structure that encompasses all or a portion of an N-turn ring. While a supercurrent is flowing through the N-turn ring, a quantized magnetic flux is introduced into the aperture of the N-turn ring using a reversible localized break in a turn in the ring. The quantized magnetic flux is trapped in the ring by removal of the localized break. The trapped flux biases the superconducting structure.
1. A sub-flux quantum generator comprising:
an N-turn ring comprising a plurality of connected turns about a common aperture, wherein a width T 50 of each respective turn in said plurality of connected turns exceeds the London penetration depth of a superconducting material used to make the respective turn;
a switching device configured to introduce a localized reversible break in a superconducting current in at least one turn in said plurality of connected turns; and
a magnetism device configured to generate a magnetic field within said common aperture.
2. The sub-flux quantum generator of claim 1 , wherein said sub-flux quantum generator further comprises a first lead and a second lead that electrically couple said N-turn ring and said magnetism device such that a current is driven through said N-turn ring by said magnetism device.
3. The sub-flux quantum generator of claim 1 wherein a turn in said plurality of connected turns comprises a type I superconductor.
4. The sub-flux quantum generator of claim 1 wherein a turn in said plurality of connected turns comprises niobium or aluminum.
5. The sub-flux quantum generator of claim 1 where a turn in said plurality of connected turns comprises a type II superconductor.
6. The sub-flux quantum generator of claim 1 , wherein said switching device comprises a cryotron that encompasses a portion of one or more of the turns in said plurality of connected turns.
7. The sub-flux quantum generator of claim 1 , wherein said switching device is a cryotron that encompasses a portion of each turn in said plurality of connected turns.
8. The sub-flux quantum generator of claim 1 , wherein said switching device is a Josephson junction in a turn in said plurality of connected turns and wherein said Josephson junction is in a superconducting zero voltage state or a nonsuperconducting voltage state.
9. The sub-flux quantum generator of claim 8 , wherein said Josephson junction comprises a first critical current lead and a second critical current lead for driving a critical current through said Josephson junction and wherein
said Josephson junction is in said superconducting zero voltage state in an absence of said critical current; and
said Josephson junction is in said nonsuperconducting voltage state in a presence of said critical current.
10. The sub-flux quantum generator of claim 1 wherein said magnetic field is homogeneous within said common aperture.
11. The sub-flux quantum generator of claim 1 wherein said magnetic field is inhomogeneous within said common aperture.
12. The sub-flux quantum generator of claim 1 wherein said magnetic field has a gradient in at least one direction within said common aperture.
13. The sub-flux quantum generator of claim 1 , wherein said switching device comprises a laser configured to introduce said localized reversible break in said superconducting current in said at least one said turn in said plurality of connected turns.
14. The sub-flux quantum generator of claim 1 wherein said switching device comprises a plurality of switches, wherein each switch in said plurality of switches is configured to introduce a localized reversible break in a superconducting current in at least one turn in said plurality of connected turns.
15. A superconducting device comprising an outer structure and an inner structure, wherein
said outer structure comprises a superconducting ring that encompasses all or a portion of said inner structure, the superconducting ring including a Josephson junction; and
said inner structure includes an N-turn ring, said N-turn ring comprising a plurality of connected turns about a common aperture, wherein a width T 50 of each respective turn in said plurality of connected turns exceeds the London penetration depth of the superconducting material used to make the respective turn.
16. The superconducting structure of claim 15 wherein the outer structure is a qubit.
17. The superconducting structure of claim 15 wherein the outer structure is a phase qubit or a persistent current qubit.
18. The superconducting structure of claim 15 wherein a turn in said plurality of connected turns comprises a type I superconductor.
19. The superconducting structure of claim 15 wherein a turn in said plurality of connected turns comprises niobium or aluminum.
20. The superconducting structure of claim 15 wherein a turn in said plurality of connected turns comprises a type II superconductor.
21. The superconducting structure of claim 15 , wherein said inner structure further comprises a switching device configured to introduce a localized reversible break in a superconducting current in at least one turn in said plurality of connected turns.
22. The superconducting structure of claim 21 wherein said switching device is a cryotron.
23. The superconducting structure of claim 22 wherein said cryotron encloses said plurality of connected turns.
24. The superconducting structure of claim 21 , wherein said switching device is a Josephson junction in a turn in said plurality of connected turns, and wherein said Josephson junction is in a superconducting zero voltage state or a nonsuperconducting voltage state.
25. The superconducting structure of claim 24 , wherein said Josephson junction comprises a first critical current lead and a second critical current lead for driving a critical current through said Josephson junction and wherein
said Josephson junction is in said superconducting zero voltage state in an absence of said critical current; and
said Josephson junction is in said nonsuperconducting voltage state in a presence of said critical current.
26. The superconducting structure of claim 21 , wherein said switching device comprises a laser configured to introduce said localized reversible break in said superconducting current in said at least one turn in said plurality of connected turns.
27. The superconducting structure of claim 15 , wherein each respective turn in said plurality of connected turns comprises a Josephson junction that is capable of introducing a localized reversible break in the superconductivity of the respective turn.
28. The superconducting structure of claim 15 , wherein said outer structure has a first stable state and a second stable state, and wherein said inner structure further comprises a magnetism device configured to generate a magnetic field within said common aperture, the magnetic field having a magnitude that biases said first stable state and said second stable state.
29. The superconducting structure of claim 28 wherein said first stable state and said second stable state are degenerate.
30. A method of trapping a quantized magnetic flux in an N-turn ring, wherein said N-turn ring comprises a plurality of connected turns about a common aperture, the method comprising:
introducing a localized break in a turn in said plurality of connected turns, said localized break interrupting a supercurrent in a portion of said turn, thereby inducing a quantized magnetic flux in said common aperture; and
restoring supercurrent in said portion of said turn by removing said localized break in said turn, thereby trapping said quantized magnetic flux in said common aperture.
31. The method of claim 30 , wherein said localized break in said turn is introduced by passing a bias current through a Josephson junction in said portion of said ring, wherein said bias current causes said Josephson junction to toggle from a superconducting zero voltage state to a nonsuperconducting voltage state.
32. The method of claim 30 wherein a turn in said plurality of connected turns comprises a type I or type II superconductor.
33. The method of claim 30 wherein said introducing step further comprises running a current through a cryotron that encloses one or more turns in said N-turn ring, thereby introducing said localized break in said turn in said N-turn ring.
34. The method of claim 30 wherein said quantized magnetic field is homogeneous throughout said common aperture.
35. The method of claim 30 wherein said quantized magnetic field is inhomogeneous in said common aperture.
36. The method of claim 30 , wherein said quantized magnetic field has a gradient in at least one direction in said common aperture.
37. The method of claim 30 wherein a superconducting structure encompasses a portion of said N-turn ring and wherein said introducing and restoring steps bias said superconducting structure.
38. The method of claim 37 wherein said superconducting structure has a first energy state and a second energy state that are degenerate during all or a portion of said restoring step.
39. The method of claim 37 wherein said superconducting structure has a first energy state and a second energy state that have a predetermined energy differential during said restoring.
40. The method of claim 37 wherein said superconducting structure is a persistent current qubit.
41. A sub-flux quantum generator comprising:
an N-turn ring means comprising a plurality of connected turns about a common aperture, wherein a width T 50 of each respective turn in said plurality of connected turns exceeds the London penetration depth of a superconducting material used to make the respective turn;
a switching device means configured to introduce a localized reversible break in a superconducting current in at least one turn in said plurality of connected turns; and
a magnetism device means configured to generate a magnetic field within said common aperture.
42. A superconducting device comprising an outer structure means and an inner structure means, wherein
said outer structure means comprises a superconducting ring that encompasses all or a portion of said inner structure, the superconducting ring including a Josephson junction; and
said inner structure means includes an N-turn ring, said N-turn ring comprising a plurality of connected turns about a common aperture, wherein a width T 50 of each respective turn in said plurality of connected turns exceeds the London penetration depth of the superconducting material used to make the respective turn.