Method for forming pattern of stacked film
View Patent ↗A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF 4 and O 2 is used, and suitably, a gas ratio of CF 4 and O 2 in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.
1. A method for forming a pattern of a stacked film, comprising:
sequentially depositing a first oxide film, a semiconductor film and a second oxide film on a substrate;
laser annealing the semiconductor film;
forming a resist pattern on the second oxide film; and
forming the pattern of the stacked film including the semiconductor film and the second oxide film, by dry etching the second oxide film and the semiconductor film by using the resist pattern as a mask,
wherein said fanning the pattern of the stacked film comprises:
forming a pattern of said semiconductor film comprising a taper angle of 10°<γ<60° on said first oxide film which is formed on the substrate and a pattern of said second oxide film comprising a taper angle of 45°<β<60°.
2. The method for forming a pattern of a stacked film according to claim 1 , wherein said forming said pattern of said stacked film further comprises:
controlling the taper angle of the patterned second oxide film within an angle range of 45°<θ<60°, by carrying out the dry etching with a gas ratio of CF 4 and O 2 of 1:1 in a mixture gas; and
controlling the taper angle of the patterned semiconductor film within an angle range of 10°<γ<60 °, by switching the etching gas to a mixture gas of Cl 2 and O 2 .
3. The method for forming a pattern of a stacked film according to claim 1 , wherein the etching gas comprises a mixture gas of CF 4 and O 2 .
4. The method for forming a pattern of a stacked film according to claim 1 , wherein the semiconductor film after said laser annealing the semiconductor film comprises a polysilicon film, and a film thickness ratio of the second oxide film and the polysilicon film, is set at 1:6.
5. The method for forming a pattern of a stacked film according to claim 1 , further comprising:
after said forming the pattern of the stacked film, coating a gate insulating film which covers the pattern of the stacked film; and
forming wiring on the gate insulating film, the wiring crossing over the pattern of the stacked film,
wherein said wiring comprises a metal selected from the group consisting of Cr, W, Mo, Ti, Ta and silicide films thereof.