Heterojunction bipolar transistor and method of producing the same
View Patent ↗A heterojunction bipolar transistor of the present invention is produced from a wafer including a substrate and a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of the first conductivity type sequentially laminated on the substrate in this order. First, the wafer is etched up to a preselected depth of the collector layer via a first photoresist, which is formed at a preselected position on the emitter layer, serving as a mask. Subsequently, the collector layer etched with at least the sidewalls of the base layer and collector layer, which are exposed by the first etching step, and a second photoresist covering part of the surface of the collector layer contiguous with the sidewalls serving as a mask.
1. A method of producing a heterojunction bipolar transistor (HBT) from a wafer consisting of a substrate and a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of said first conductivity type sequentially laminated on said substrate in this order, said method comprising:
a first etching step of etching said wafer up to a preselected depth of said collector layer by using a first photoresist, which is formed at a preselected position on said emitter layer, as a mask; and
a second etching step of etching said collector layer by using a second photoresist covering at least a sidewall of said base layer and a sidewall of said collector layer exposed by said first etching step and a part of a surface of said collector layer contiguous with the sidewalls as a mask;
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
2. The method as claimed in claim 1 , further comprising:
a step of forming, before forming said first photoresist, an SiN film on said substrate; and
removing, after forming said first photoresist, said SiN film exposed.
3. The method as claimed in claim 2 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
4. The method as claimed in claim 1 , further comprising a step of forming at a preselected position on said emitter layer a base electrode extending throughout said emitter layer to be thereby electrically connected to said base layer.
5. The method as claimed in claim 4 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
6. The method as claimed in claim 4 , further comprising:
a step of forming, before forming said first photoresist, an SiN film on said substrate; and
removing, after forming said first photoresist, said SiN film exposed.
7. The method as claimed in claim 6 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
8. A method of producing an HBT from a wafer consisting of a substrate and a first collector layer of a first conductivity type, an etching stopper layer for preventing said first collector layer from being etched, a second collector layer of said first conductivity type, a base layer of a second conductivity type and an emitter layer of of said first conductivity type sequentially laminated on said substrate in this order, said method comprising:
a first etching step of etching said wafer to a depth where said etching stopper layer is exposed by using a first photoresist formed at a preselected position on said emitter layer as a mask; and
a second etching step of etching said etching stopper layer and said first collector layer, which are exposed, by using a second photoresist covering at least a sidewall of said base layer and a sidewall of said second collector layer and a part of a surface of said etching stopper layer contiguous with the sidewalls as a mask.
9. The method as claimed in claim 8 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, and SiN film exposed.
10. The method as claimed in claim 8 , further comprising:
a step of forming, before forming said first photoresist, an SiN film on said substrate; and
removing, after forming said first photoresist, said SiN film exposed.
11. The method as claimed in claim 10 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
12. The method as claimed in claim 8 , further comprising a step of forming at a preselected position on said emitter layer a base electrode extending throughout said emitter layer to be thereby electrically connected to said base layer.
13. The method as claimed in claim 12 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
14. The method as claimed in claim 12 , further comprising:
a step of forming, before forming said first photoresist, an SiN film on said substrate; and
removing, after forming said first photoresist, said SiN film exposed.
15. The method as claimed in claim 14 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
16. A method of producing an HBT from a wafer consisting of a substrate and a first collector layer of a first conductivity type, a second collector layer of said first conductivity type, a base layer of a second conductivity type and an emitter layer of said first conductivity type sequentially laminated on said substrate in this order, said method comprising:
a first etching step of etching said wafer to a depth where said first collector layer is exposed by using a first photoresist formed at a preselected position on said emitter layer as a mask; and
a second etching step of etching said first collector layer, which is exposed, by using a second photoresist covering at least a sidewall of said base layer and a sidewall of said second collector layer and a part of a surface of said first collector layer contiguous with the sidewalls as a mask.
17. The method as claimed in claim 16 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
18. The method as claimed in claim 16 , further comprising:
a step of forming, before forming said first photoresist, an SiN film on said substrate; and
removing, after forming said first photoresist, said SiN film exposed.
19. The method as claimed in claim 18 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
20. The method as claimed in claim 16 , further comprising a step of forming at a preselected position on said emitter layer a base electrode extending throughout said emitter layer to be thereby electrically connected to said base layer.
21. The method as claimed in claim 20 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
22. The method as claimed in claim 20 , further comprising:
a step of forming, before forming said first photoresist, an SiN film on said substrate; and
removing, after forming said first photoresist, said SiN film exposed.
23. The method as claimed in claim 22 , further comprising:
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.
24. A method of producing a transistor from a wafer consisting of a substrate and a first function layer, a second function layer and a third function layer sequentially laminated on said substrate in this order, said method comprising:
a first etching step of etching said wafer up to a preselected depth of said first function layer by using a first photoresist formed at a preselected position on said third function layer as a mask; and
a second etching step of etching said first function layer, which is exposed, by using a second photoresist covering at least a sidewall of said second function layer and a sidewall of said first function layer, which are exposed by said first etching step, and a part of a surface of said first function layer contiguous with the sidewalls as a mask;
a step of removing, before forming said second photoresist, said first photoresist and then forming an SiN film on said substrate; and
a step of removing, after forming said second photoresist, said SiN film exposed.