Method for forming silicon oxide layer
View Patent ↗A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon layer has been formed on the substrate by PECVD to transform a portion of the amorphous silicon layer into a superficial oxide layer.
1. A method for forming a silicon oxide, used in the production of a polysilicon film transistor, the process comprising:
providing a plasma-enhanced chemical vapor deposition (PECVD) system;
placing an insulating substrate in the PECVD system;
forming an amorphous silicon layer on the insulating substrate by PECVD; and
performing an oxygen-containing plasma treatment over the substrate to transform a portion of the amorphous silicon layer to a superficial oxide layer.
2. The process of claim 1 , wherein the insulating substrate includes a glass and a spacer layer.
3. The process of claim 1 , wherein the surface treatment performed over the substrate to transform the portion of amorphous silicon layer to the superficial oxide layer, the oxygen-containing source is excited to form a plasma for surface treating the amorphous silicon layer.
4. The process of claim 1 , wherein the oxygen-containing source includes N 2 O or O 2 .
5. The process of claim 1 , wherein the plasma enhanced chemical vapor deposition system is a radio frequency (RF) plasma-enhanced chemical vapor deposition system.
6. The process of claim 1 , wherein the plasma enhanced chemical vapor deposition system is an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system.
7. The process of claim 1 , wherein the plasma enhanced chemical vapor deposition system is a remote plasma chemical vapor deposition (RPCVD) system.
8. The process of claim 1 , wherein the plasma enhanced chemical vapor deposition system is a magnetic plasma chemical vapor deposition (MPCVD) system.