Manufacturing method and structure of copper lines for a liquid crystal panel
View Patent ↗In those conventional arts, for large-size LCD, the process of copper damascene interconnect has some problems of forming a uneven copper seed layer and forming hollows during electrical plating due to the electrical plating area being too large to electroplate uniformly. In this invention, it employs a Cu tape to directly stick on a substrate to replace forming a copper seed layer and electroplating. Hence, the invention avoids the problem of unevenness and hollows in those conventional arts and so the Cu lines can be applied to the large-size LCD.
1. A manufacturing method of Cu lines in a liquid crystal panel, comprising:
forming a plurality of trenches on a substrate;
sticking a Cu slice on said substrate and said plurality of trenches; and
performing a chemical mechanical polishing to remove a portion of said Cu
slice outside of said plurality of trenches.
2. The manufacturing method according to claim 1 , wherein said method further comprises forming a buffer layer between said trenches, said substrate and said Cu slice.
3. The manufacturing method according to claim 1 , wherein said substrate is a glass substrate.
4. The manufacturing method according to claim 1 , wherein said trenches are formed by etching with a solution of NaOH.
5. The manufacturing method according to claim 1 , wherein said trenches are formed by etching with a solution of HF.
6. The manufacturing method according to claim 1 , wherein said trenches are formed by etching with a mixing solution of HF and NH 4 F.
7. The manufacturing method according to claim 1 , wherein said trenches are formed in a nondisplay region of an edge of said liquid crystal panel.
8. The manufacturing method according to claim 1 , wherein said Cu slice is struck on said substrate with heating.
9. The manufacturing method according to claim 1 , wherein said Cu slice is struck on said substrate with pressurizing.
10. A manufacturing method of Cu lines in a liquid crystal panel, comprising:
forming a SiN x layer on a substrate;
forming a plurality of trenches on said SiN x layer;
sticking a Cu slice on said SiN x layer and said plurality of trenches; and
performing a chemical mechanical polishing to remove a portion of said Cu slice outside of said plurality of trenches.
11. The manufacturing method according to claim 10 , wherein said method further comprises forming a buffer layer between said trenches, said SiN x and said Cu slice.
12. The manufacturing method according to claim 10 , wherein said trenches are etched with a wet etching.
13. The manufacturing method according to claim 10 , wherein said trenches are formed in a nondisplay region of an edge of said liquid crystal panel.
14. The manufacturing method according to claim 10 , wherein said Cu slice is struck on said substrate with heating.
15. The manufacturing method according to claim 10 , wherein said Cu slice is struck on said substrate with pressurizing.