IP Library Granted Patent US 7,267,780
Granted Patent B1
US 7,267,780 · App. 10/455,865 · Granted Sep 11, 2007

Formation of facets on optical components

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Quick Facts
Patent No.
US 7,267,780
App. No.
10/455,865
Granted
Sep 11, 2007
Kind
B1
Abstract

A method of forming an optical component on a substrate structure includes forming a ridge in a light transmitting medium positioned on a base. The ridge includes a waveguide region configured to propagate light signals and a flange region extending across a longitudinal axis of the waveguide region. The method also includes removing at least a portion of the flange region so as to expose a facet aligned with the waveguide region such that light signals propagated along the waveguide region are transmitted through the facet.

Claims (37)

1. A method of forming an optical component on a substrate structure, comprising:

forming a ridge in a light transmitting medium positioned on a base, the ridge including a waveguide region configured to propagate light signals and a flange region extending across a longitudinal axis of the waveguide region; and

removing at least a portion of the flange region while a mask protects a top of the waveguide region of the ridge but does not protect at least a portion of a top of the flange region of the ridge, the portion of the flange region being removed so as to expose a facet aligned with the waveguide region such that light signals propagated along the waveguide region are transmitted through the facet, the portion of the flange region being removed after the ridge is formed.

2. The method of claim 1 , wherein at least a portion of the substrate structure is positioned between the facet and an edge of the substrate structure.

3. The method of claim 1 , further comprising:

forming the before removing the portion of the flange region and after forming the ridge.

4. The method of claim 3 , wherein removing the portion of the flange region includes etching the substrate structure after forming the mask.

5. The method of claim 4 , wherein the entire facet is exposed during the etch.

6. The method of claim 1 , wherein the facet is formed such that an angle between the facet and the direction of propagation is 82 to 84 degrees.

7. The method of claim 1 , wherein removing at least a portion of the flange region includes removing only a portion of the flange region such that another portion of the flange region remains intact on the optical component.

8. The method of claim 1 , wherein the mask protects only a portion of the flange region.

9. The method of claim 1 , wherein forming the ridge includes forming a second mask so as to protect a region of the optical component where the ridge is to be formed, the mask being different from the second mask.

10. The method of claim 9 , further comprising:

etching the optical component with the second mask in place on the optical component so as to form the ridge on the optical component.

11. The method of claim 10 , further comprising:

removing the second mask before forming the mask.

12. The method of claim 1 , wherein the light transmitting medium is in the ridge when the ridge is formed and material in the removed portion of the flange region has a chemical composition that is the same as a chemical composition of the light transmitting medium in the ridge when the ridge is formed.

13. The method of claim 1 , further comprising:

forming a second mask so as to protect a region of the optical component where the ridge is to be formed before forming the ridge;

removing the second mask before removing the portion of the flange region; and

forming the mask on the optical component before removing the portion of the flange region and after removing the second mask.

14. The method of claim 1 , further comprising:

forming a second mask so as to protect a region of the optical component where the ridge is to be formed before forming the ridge;

removing the second mask before removing the portion of the flange region;

forming the mask on the optical component before removing the portion of the flange region and after removing the second mask; and

wherein removing the portion of the flange region includes etching the portion of the flange region such that the entire facet is exposed during the etch.

15. The method of claim 1 , further comprising:

forming a second mask so as to protect a region of the optical component where the ridge is to be formed before forming the ridge;

removing the second mask before removing the portion of the flange region;

forming the mask on the optical component before removing the portion of the flange region and after removing the second mask; and

wherein the light transmitting medium is in the ridge when the ridge is formed and material in the removed portion of the flange region has a chemical composition that is the same as a chemical composition of the light transmitting medium in the ridge when the ridge is formed.

16. The method of claim 1 , further comprising:

forming a second mask so as to protect a region of the optical component where the ridge is to be formed before forming the ridge;

removing the second mask before removing the portion of the flange region;

forming the mask on the optical component before removing the portion of the flange region and after removing the second mask;

wherein removing the portion of the flange region includes etching the portion of the flange region such that the entire facet is exposed during the etch; and

wherein the light transmitting medium is in the ridge when the ridge is formed and material in the removed portion of the flange region has a chemical composition that is the same as a chemical composition of the light transmitting medium in the ridge when the ridge is formed.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL AT REEL/FRAME NO. 37897/0418 Recorded Jul 13, 2018
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MELLANOX TECHNOLOGIES SILICON PHOTONICS INC.
Reel/Frame 046542/0669 →
PATENT SECURITY AGREEMENT Recorded Feb 23, 2016
From: MELLANOX TECHNOLOGIES SILICON PHOTONICS INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 037897/0418 →
CHANGE OF NAME Recorded Jan 20, 2016
From: KOTURA, INC.
To: MELLANOX TECHNOLOGIES SILICON PHOTONICS INC.
Reel/Frame 037565/0034 →