Component working with acoustic waves and having a matching network
View Patent ↗A component working with acoustic bulk waves is provided that has a multi-layer substrate, where the multi-layer substrate comprises an integrated matching network and further circuit elements for adapting the electrical filter properties and can serve as carrier substrate for thin-film resonators.
1. A component working with acoustic bulk waves, comprising:
at least one thin-film resonator, comprising:
at least one piezoelectric layer and
at least two electrodes applied in layers;
the component further comprising:
a multi-layer substrate comprising:
an upper side upon which the at least one thin-film resonator is arranged;
outside electrodes; and
at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected;
the component further comprising:
at least one chip component arranged on the upper side of the multi-layer substrate in addition to the at least one thin-film resonator,
wherein the at least one chip component is a filter chip.
2. The component according to claim 1 , wherein the at least one integrated circuit element forms at least a part of a matching network.
3. The component according to claim 1 , wherein a part of the at least one circuit element is arranged on the upper side of the multi-layer substrate as interconnects.
4. The component according to claim 1 , further comprising:
at least one discrete passive or active circuit element arranged on the upper side of the multi-layer substrate.
5. The component according to claim 1 , wherein a plurality of thin-film resonators form band pass filters with a ladder-type arrangement.
6. The component according to claim 1 , further comprising:
at least one acoustic mirror that comprises a plurality of alternating layers with high and low acoustic impedance.
7. The component according to claim 1 , wherein the at least one filter chip is a surface acoustic wave (SAW) component.
8. The component according to claim 1 , wherein the multi-layer substrate comprises ceramic layers.
9. The component according to claim 1 , wherein the multi-layer substrate comprises layers of silicon.
10. The component according to claim 1 , wherein the multi-layer substrate comprises layers of an organic material.
11. The component according to claim 10 , wherein the multi-layer substrate comprises layers of an organic laminated material.
12. The component according to claim 10 , wherein the multi-layer substrate comprises layers of an organic plastic material.
13. The component according to claim 1 , further comprising:
a multi-layer substrate with the integrated circuit elements upon which the layers of the at least one thin-film resonator are directly deposited.
14. The component according to claim 1 , further comprising:
a carrier substrate upon which the layers of the at least one thin-film resonator are deposited.
15. A component working with acoustic bulk waves, comprising:
at least one thin-film resonator, comprising:
at least one piezoelectric layer and
at least two electrodes applied in layers;
the component further comprising:
a multi-layer substrate comprising:
an upper side upon which the at least one thin-film resonator is arranged;
outside electrodes; and
at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected;
the component further comprising:
a carrier substrate upon which the at least one thin-film resonator is deposited, the at least one thin-film resonator being electrically connected with bond wires to the at least one circuit element integrated in the multi-layer substrate, the carrier substrate being arranged on an upper side of the multi-layer substrate.
16. The component according to claim 15 , wherein a plurality of thin-film resonators form a serial cascade circuit of a plurality of thin-film resonators for assuring a higher power compatibility of the component.
17. The component according to claim 15 , wherein the carrier substrate comprises a multi-layer structure.
18. The component according to claim 17 , wherein the carrier substrate with a multi-layer structure comprises at least one integrated circuit element.
19. A component working with acoustic bulk waves, comprising:
at least one thin-film resonator, comprising:
at least one piezoelectric layer and
at least two electrodes applied in layers;
the component further comprising:
a multi-layer substrate comprising:
an upper side upon which the at least one thin-film resonator is arranged;
outside electrodes; and
at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected;
the component further comprising:
a cavity located between an active region of the at least one thin film resonator and the multi-layer substrate.
20. A component working with acoustic bulk waves, comprising:
at least one thin-film resonator, comprising:
at least one piezoelectric layer and
at least two electrodes applied in layers;
the component further comprising:
a multi-layer substrate comprising:
an upper side upon which the at least one thin-film resonator is arranged;
outside electrodes; and
at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected;
the component further comprising:
a carrier substrate upon which the at least one thin-film resonator is deposited, the at least one thin-film resonator being electrically connected with bond wires to the at least one circuit element integrated in the multi-layer substrate, the carrier substrate being arranged on an upper side of the multi-layer substrate, the carrier substrate being connected to the multi-layer substrate via a flip-chip technique;
wherein the carrier substrate comprises a multi-layer structure.
21. The component according to claim 20 , wherein the carrier substrate with a multi-layer structure comprises at least one integrated circuit element.
22. A component working with acoustic bulk waves, comprising:
at least one thin-film resonator, comprising:
at least one piezoelectric layer and
at least two electrodes applied in layers;
the component further comprising:
a multi-layer substrate comprising:
an upper side upon which the at least one thin-film resonator is arranged;
outside electrodes; and
at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected;
wherein a plurality of circuit elements integrated in the multi-layer substrate form a part of a duplexer circuit.
23. The component according to claim 22 , further comprising:
two separate carrier substrates in two separate housings upon which are arranged, on an upper side of the multi-layer substrate, band pass filters constructed of a plurality of thin-film resonators in the reception path and transmission path of the duplexer.
24. The component according to claim 22 , wherein band pass filters constructed of a plurality of thin-film resonators in the reception path and transmission path of the duplexer are realized on a carrier substrate or directly on the multi-layer substrate.
25. The component according to claim 22 , further comprising:
two separate carrier substrates in a common housing upon which are arranged, on an upper side of the multi-layer substrate, band pass filters constructed of a plurality of thin-film resonators in the reception path and transmission path of the duplexer.