IP Library Granted Patent US 6,870,158
Granted Patent B1
US 6,870,158 · App. 10/456,310 · Granted Mar 22, 2005

Microfabricated cylindrical ion trap

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Quick Facts
Patent No.
US 6,870,158
App. No.
10/456,310
Granted
Mar 22, 2005
Kind
B1
Abstract

A microscale cylindrical ion trap, having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale cylindrical ion trap to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The microscale CIT has a reduced ion mean free path, allowing operation at higher pressures with less expensive and less bulky vacuum pumping system, and with lower battery power than conventional- and miniature-sized ion traps. The reduced electrode voltage enables integration of the microscale cylindrical ion trap with on-chip integrated circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of microscale cylindrical ion traps can be realized in truly field portable, handheld microanalysis systems.

Claims (27)

1. A microfabricated cylindrical ion trap, comprising:

a conducting substrate providing an endcap electrode;

a dielectric layer on the conducting substrate;

a ring electrode layer, having at least one cylindrical hole having an inner radius of less than ten microns formed therein to trap ions, on the dielectric layer;

an injection endcap dielectric layer on the ring electrode layer;

an injection endcap electrode layer on the injection endcap dielectric layer; and

means for applying an radiofrequency drive voltage between the ring electrode layer and the substrate; and

wherein the injection endcap layers have at least one injection aperture formed therethrough for injection of sample gas into the at least one cylindrical hole.

2. The microfabricated cylindrical ion trap of claim 1 , wherein the dielectric layers comprise silicon dioxide or silicon nitride.

3. The microfabricated cylindrical ion trap of claim 1 , wherein the electrode layers comprise a metal.

4. The microfabricated cylindrical ion trap of claim 3 , wherein the metal comprises aluminum, copper, tungsten, titanium nitride, nickel, or chromium.

5. The microfabricated cylindrical ion trap of claim 1 , wherein each of the at least one of the injection aperture is substantially on the cylindrical axis of each of the at least one cylindrical hole.

6. The microfabricated cylindrical ion trap of claim 1 , further comprising means to ionize the sample gas in the at least one cylindrical hole.

7. The microfabricated cylindrical ion trap of claim 1 , wherein the at least one cylindrical hole has an inner radius of less than about one microns.

8. The microfabricated cylindrical ion trap of claim 7 , wherein the dielectric layer and the injection endcap dielectric layer each have thickness less than 0.5 microns.

9. The microfabricated cylindrical ion trap of claim 1 , further comprising means for applying a radiofrequency voltage between the injection endcap electrode layer and the substrate.

10. The microfabricated cylindrical ion trap of claim 1 , further comprising means for applying a direct current voltage between the injection endcap electrode layer and the substrate.

11. The microfabricated cylindrical ion trap of claim 1 , further comprising means for applying a direct current voltage between the ring electrode layer and the substrate.

12. The microfabricated cylindrical ion trap of claim 1 , wherein the dielectric layer and the injection endcap dielectric layer each have thickness less than 5 microns.

13. A microfabricated cylindrical ion trap, comprising:

a substantially planar conducting endcap electrode;

a dielectric layer on the endcap electrode;

a ring electrode layer, having at least one cylindrical hole having an inner radius of less than ten microns formed therein to trap ions, on the dielectric layer;

an injection endcap dielectric layer on the ring electrode layer;

an injection endcap electrode layer on the injection endcap dielectric layer; and

means for applying an radiofrequency drive voltage between the ring electrode layer and the endcap electrode; and

wherein the injection endcap layers have at least one injection aperture formed therethrough for injection of sample gas into the at least one cylindrical hole.

Assignments (1)
CHANGE OF NAME Recorded Nov 3, 2017
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 044779/0720 →