Alternating implant ring terminations
View Patent ↗A semiconductor device including a semiconductive body having formed therein an active region and a termination feature which includes spaced field rings disposed around the active region and diffusion rings of the same conductivity type as, but different conductivity than the semiconductive body formed between each pair of field rings.
1. A semiconductor device, comprising:
a semiconductive body of a first conductivity type;
an active region formed in said semiconductive body, said active region including a diffused region of a second conductivity type; and
a termination feature formed in said semiconductive body, said termination feature including a plurality of spaced field rings of said second conductivity type arranged around the periphery of said active region and a plurality of diffusion rings of said first conductivity type disposed between said field rings;
wherein each of said diffusion rings has a resistivity different from that of said semiconductive body to control a potential drop between the adjacent field rings, thereby permitting the field rings to be spaced closer to one another.
2. A semiconductor device according to claim 1 , wherein said semiconductive body has an N type conductivity.
3. A semiconductor device according to claim 1 , wherein the diffusion rings are less resistive than said semiconductive body.
4. A semiconductor device according to claim 1 , wherein said semiconductive body has P type conductivity.
5. A semiconductor device according to claim 1 , further comprising a dielectric layer arranged over said termination feature.
6. A semiconductor device according to claim 1 , further comprising a diffusion region of a same conductivity type as said semiconductive body disposed between said termination feature and said active region, said diffusion region being less resistive than said semiconductive body.
7. A semiconductor device comprising:
an active region receiving semiconductor body of a first conductivity;
a termination feature formed in said semiconductor body, said termination feature including a plurality of spaced field rings of said second conductivity arranged around the periphery of said active region and a plurality of diffusion rings of said first conductivity type disposed between said field rings;
wherein each of said diffusion rings has a resistivity different from that of said semiconductive body to control a potential drop between the adjacent field rings, thereby permitting the field rings to be spaced closer to one another.
8. A semiconductor device according to claim 7 , wherein said semiconductive body has an N type conductivity.
9. A semiconductor device according to claim 7 , wherein the diffusion rings are less resistive than said semiconductive body.
10. A semiconductor device according to claim 7 , wherein said semiconductive body has P type conductivity.
11. A semiconductor device according to claim 7 , further comprising a dielectric layer arranged over said termination feature.
12. A semiconductor device according to claim 7 , further comprising an active region which comprises a diffusion of said second conductivity formed in said semiconductive body.
13. A semiconductor device according to claim 12 , further comprising a diffusion region of a same conductivity type as said semiconductive body disposed between said termination feature and said active region, said diffusion region being less resistive than said semiconductive body.