Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
A magnetoresistive effect element ( 1 ) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer ( 5 ) and magnetization free layer ( 7 )) is opposed to each other through an intermediate layer ( 6 ) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element ( 1 ) and bit lines and word lines sandwiching the magnetoresistive effect element ( 1 ) in the thickness direction. When the magnetoresistive effect element ( 1 ) and the magnetic memory device are manufactured, the ferromagnetic material layers ( 5, 7 ) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.
1. A magnetoresistive effect element which comprises a pair of ferromagnetic material layers opposed to each other with an intermediate layer therebetween to provide for a magnetoresistive change defining information which is read by applying a current flowing in a direction perpendicular to surfaces of the ferromagnetic material layers, and wherein a resistance of the element is determined by applying the current flowing perpendicular to the layers, wherein at least one of said ferromagnetic material layers is annealed during application of a rotating magnetic field and subsequently during application of a static magnetic field.
2. A magnetoresistive effect element according to claim 1 , wherein at least one of said ferromagnetic material layers is made of an amorphous or microcrystal material.
3. A magnetoresistive effect element according to claim 1 , wherein said magnetoresistive effect element is a tunnel magnetoresistive effect element using a tunnel barrier layer made of an insulating or semiconductor material as said intermediate layer.
4. A magnetoresistive effect element according to claim 1 , wherein said magnetoresistive effect element has a laminated ferri structure.
5. A magnetoresistive effect element according to claim 1 , wherein fluctuation of a coercive force H C is suppressed to be less than 6%, and a measured rectangle ratio is greater than 0.9.
6. A magnetoresistive effect element according to claim 1 , wherein patterning of the magnetoresistive effect element is effected subsequent to the annealing of said at least one ferromagnetic material layer.
7. A magnetoresistive effect element according to claim 1 , wherein fluctuation of a coercive force H C is suppressed to be less than 6%.
8. A magnetoresistive effect element according to claim 1 , wherein a measured rectangle ratio is greater than 0.9.
9. A magnetic memory device comprising:
a magnetoresistive effect element which has an arrangement in which a pair of ferromagnetic material layers are opposed to each other with an intermediate layer therebetween to provide for a magnetoresistive change defining information which is read by applying a current flowing in a direction perpendicular to the surfaces of the ferromagnetic material layers and wherein a resistance of the element is determined by applying the current flowing in a direction perpendicular to the layers; and
word lines and bit lines sandwiching said magnetoresistive effect element in the thickness direction, wherein at least one of said ferromagnetic material layers is annealed during application of a rotating magnetic field and subsequently during application of a statiz magnetic field.
10. A magnetic memory device according to claim 9 , wherein at least one of said ferromagnetic material layers is made of an amorphous or microcrystal material.
11. A magnetic memory device according to claim 9 , wherein said magnetoresistive effect element is a tunnel magnetoresistive effect element using a tunnel barrier layer made of an insulating or semiconductor material as said intermediate layer.
12. A magnetic memory device according to claim 9 , wherein said magnetoresistive effect element has a laminated ferri structure.
13. A magnetic memory device according to claim 9 , wherein patterning of the magnetoresistive effect element is effected subsequent to the annealing of said at least one ferromagnetic material layer.