Voltage follower circuit
View Patent ↗A voltage follower comprising a first field-effect transistor (MN 1 ) whose gate forms the input of the voltage follower. Further provided is a second field-effect transistor (MN 2 ) whose drain connected to the gate forms the output of the voltage follower. The sources of the two field-effect transistors (MN 1 , MN 2 ) are connected to each other and to the drain of a third field-effect transistor (MN 3 ) serving as current source and to the gate of which a predefined bias voltage is applied. The invention employs in addition a fourth field-effect transistor (MN 4 ) whose source-drain path is circuited between the output of the voltage follower and the drain of the third field-effect transistor (MN 3 ) and whose gate is connected to the gate of the third field-effect transistor (MN 3 ). As compared to prior art voltage followers the voltage follower in accordance with the invention comprises a wider voltage range in which it can be put to use. This can be made use of e.g. in amplitude shift-keyed (ASK) demodulators incorporating the voltage follower in accordance with the invention and which need to be operated with particularly small supply voltages.
1. A voltage follower comprising a first field-effect transistor (MN 1 ) whose gate forms the input of said voltage follower, and a second field-effect transistor (MN 2 ) whose drain connected to the gate forms the output of said voltage follower, whereby the sources of said two field-effect transistors (MN 1 , MN 2 ) are connected to each other and to the drain of a third field-effect transistor (MN 3 ) serving as current source and to the gate of which a predefined bias voltage is applied, and a fourth field-effect transistor (MN 4 ) whose source-drain path is circuited between the output of said voltage follower and the drain of said third field-effect transistor (MN 3 ) and whose gate is connected to the gate of said third field-effect transistor (MN 3 ).
2. The voltage follower as set forth in claim 1 wherein the source of said third field-effect transistor (MN 3 ) is connected to ground and the drains of said first and second field-effect transistors (MN 1 , MN 2 ) are connected to a supply voltage potential (Vcc) via loads.
3. The voltage follower as set forth in claim 1 wherein the source of said third field-effect transistor (MP 30 ) is connected to a supply voltage potential (Vcc) and the drains of said first field-effect transistor (MP 10 ) and said second field-effect transistor (MP 20 ) are connected to ground potential via loads (MN 10 , MN 20 ).
4. The voltage follower as set forth in claim 3 wherein said loads are active loads (MP 1 , MP 2 ; MN 10 , MN 20 ) with current mirrors.
5. The voltage follower as set forth in claim 4 wherein the field-effect transistors (MN 1 , MN 2 , MN 3 , MN 4 , MP 1 , MP 2 ; MP 10 , MP 20 , MP 30 , MP 40 ; MN 10 , MN 20 ) are MOSFETs.
6. A ASK demodulator circuit having a voltage follower comprising:
a first field-effect transistor (MN 1 ) whose gate forms the input of said voltage follower, and a second field-effect transistor (MN 2 ) whose drain connected to the gate forms the output of said voltage follower, whereby the sources of said two field-effect transistors (MN 1 , MN 2 ) are connected to each other and to the drain of a third field-effect transistor (MN 3 ) serving as current source and to the gate of which a predefined bias voltage is applied, and a fourth field-effect transistor (MN 4 ) whose source-drain path is circuited between the output of said voltage follower and the drain of said third field-effect transistor (MN 3 ) and whose gate is connected to the gate of said third field-effect transistor (MN 3 ).
7. The ASK demodulator as set forth in claim 6 further comprising a rectifier ( 2 , C 1 ) whose output ( 5 ) is connected to a first voltage follower ( 6 ) whose output is connected to a first capacitor (C 2 ) and connected to a second voltage follower ( 7 ) configured as set forth in any of the claims 1 to 5 and whose output is connected to a second capacitor ( 3 ) whose capacitance is smaller than the capacitance of said first capacitor (C 2 ), said first capacitor (C 2 ) being connected to the one input and said second capacitor ( 3 ) being connected to the other input of a comparator ( 8 ).
8. The ASK demodulator as set forth in claim 7 wherein said two voltage followers ( 6 , 7 ) each comprise opposing offset voltages.
9. The ASK demodulator as set forth in claim 8 wherein said comparator ( 8 ) comprises an offset voltage.
10. The ASK demodulator as set forth in claim 9 wherein said comparator ( 8 ) is a comparator including hysteresis.