Inductor for semiconductor integrated circuit and method of fabricating the same
View Patent ↗Disclosed are an inductor for a semiconductor integrated circuit, which provides a wider cross-sectional area, significantly reduces the resistance to improve the Q value and has a highly uniform film thickness, and a method of fabricating the inductor. A spiral inductor is formed on a topmost interconnection layer of a multilayer interconnection layer formed by a damascene method. This inductor is formed by patterning a barrier metal layer on an insulation film, on which a topmost interconnection is formed, in such a way that the barrier metal layer contacts the topmost interconnection, then forming a protective insulation film on an entire surface of the barrier metal layer, forming an opening in that portion of the protective insulation film which lies over the barrier metal layer, forming a thick Cu film with the barrier metal layer serving as a plating electrode, and performing wet etching of the Cu film. This process can allow the inductor to be so formed as to be thick and have a wide line width.
1. A semiconductor integrated circuit, comprising:
a substrate;
an interconnection layer formed on said substrate by a damascene method, and comprising at least one interconnection; and
a conductive layer formed on said interconnection layer, said conductive layer including a pattern thereon to form an inductor, said inductor contacting said at least one interconnection,
said conductive layer comprising:
a first barrier layer formed on a top surface of said at least one interconnection;
a lower protective film formed over said first barrier layer;
a second barrier layer formed over said lower protective layer;
a metal film formed over said second barrier layer; and
an upper barrier layer formed on said metal film.