Magnetoresistive sensor having bias magnets with steep endwalls
View Patent ↗A magnetoresistive sensor has bias magnets with substantially vertical end walls. The offset between the bias magnets and the free layer is optimized by adjusting the thickness of a spacer layer. A disk drive has a read element including a magnetoresistive sensor with optimized bias magnets having substantially vertical end walls.
1. A magnetoresistive sensor, comprising:
a sensor stack including a ferromagnetic pinned layer and a ferromagnetic free layer, said sensor stack having a first and second end;
a first bias magnet disposed at said first end of said sensor stack, said first bias magnet having a substantially vertical end wall; and,
a second bias magnet disposed at said second end of said sensor stack, said second bias magnet having a substantially vertical end wall;
wherein the free layer includes a geometrical center, each bias magnet includes a geometrical center, wherein the geometrical centers of the bias magnets are offset from the geometrical center of the free layer,
wherein a separation between the free layer and each bias magnet is less than about 5 nanometers.
2. A magnetoresistive sensor as in claim 1 further comprising leads that overlap the sensor stack.
3. A magnetoresistive sensor as in claim 1 further comprising leads that do not overlap the sensor stack.
4. A magnetoresistive sensor as in claim 1 wherein the bias magnets are physically spaced apart from the free layer.
5. A magnetoresistive sensor as in claim 1 wherein the offset between the geometrical center of the free layer and the geometrical center of each bias magnet is less than about 8 nanometers.
6. A magnetoresistive sensor, comprising:
a sensor stack including a ferromagnetic free layer, said ferromagnetic free layer having a first and second end;
a nonmagnetic spacer layer disposed at said first end of said sensor stack, said nonmagnetic spacer layer having a thickness;
a bias magnet disposed over said nonmagnetic spacer layer at said first end of said ferromagnetic free layer, wherein said bias magnet includes a substantially vertical end wall and provides a magnetic stabilization field affecting said free layer, said magnetic stabilization field having a magnitude;
wherein the separation between the free layer and the bias magnet is less than about 5 nanometers.
7. A magnetoresistive sensor as in claim 6 wherein the preselected range of values of the magnetic stabilization field is at least 50% of a value obtained in an otherwise identical sensor with no offset between the geometrical center of the bias magnet and the geometrical center of the free layer and no separation between the free layer and the bias magnet.
8. A magnetoresistive sensor as in claim 6 further comprising leads that overlap the sensor stack.
9. A magnetoresistive sensor as in claim 6 further comprising leads that do not overlap the sensor stack.
10. A magnetoresistive sensor comprising:
a sensor stack including a ferromagnetic free layer, said ferromagnetic free layer having a first and second end;
a nonmagnetic spacer layer disposed at said first end of said sensor stack, said nonmagnetic spacer layer having a thickness;
a bias magnet disposed over said nonmagnetic spacer layer at said first end of said ferromagnetic free layer, wherein said bias magnet includes a substantially vertical end wall and provides a magnetic stabilization field affecting said free layer, said magnetic stabilization field having a magnitude;
wherein said thickness of said nonmagnetic spacer layer is adjusted such that said magnitude of said magnetic stabilization field is within a preselected range of values;
wherein the nonmagnetic spacer layer comprises chromium,
wherein the separation between the free layer and the bias magnet is less than about 5 nanometers.
11. A magnetoresistive sensor comprising:
a sensor stack including a ferromagnetic free layer, said ferromagnetic free layer having a first and second end;
a nonmagnetic spacer layer disposed at said first end of said sensor stack, said nonmagnetic spacer layer having a thickness;
a bias magnet disposed over said nonmagnetic spacer layer at said first end of said ferromagnetic free layer, wherein said bias magnet includes a substantially vertical end wall and provides a magnetic stabilization field affecting said free layer, said magnetic stabilization field having a magnitude;
wherein said thickness of said nonmagnetic spacer layer is adjusted such that said magnitude of said magnetic stabilization field is within a preselected range of values;
wherein the free layer includes a geometrical center, the bias magnet includes a geometrical center, and an offset between the geometrical center of the free layer and the geometrical center of the bias magnet is less than about 8 nanometers.
12. A magnetoresistive sensor comprising:
a sensor stack including a ferromagnetic free layer, said ferromagnetic free layer having a first and second end;
a nonmagnetic spacer layer disposed at said first end of said sensor stack, said nonmagnetic spacer layer having a thickness;
a bias magnet disposed over said nonmagnetic spacer layer at said first end of said ferromagnetic free layer, wherein said bias magnet includes a substantially vertical end wall and provides a magnetic stabilization field affecting said free layer, said magnetic stabilization field having a magnitude;
wherein said thickness of said nonmagnetic spacer layer is adjusted such that said magnitude of said magnetic stabilization field is within a preselected range of values;
wherein the separation between the free layer and the bias magnet is less than about 5 nanometers.
13. A disk drive, comprising:
a magnetic disk;
a write element for writing information to said disk;
a magnetoresistive sensor for reading information from said disk, wherein said magnetoresistive sensor includes:
a sensor stack including a ferromagnetic pinned layer and a ferromagnetic free layer, said sensor stack having a first and second end;
a first bias magnet disposed at said first end of said sensor stack, said first bias magnet having a substantially vertical end wall; and,
a second bias magnet disposed at said second end of said sensor stack, said second bias magnet having a substantially vertical end wall;
wherein the free layer includes a geometrical center, each bias magnet includes a geometrical center, wherein the geometrical centers of the bias magnets are offset from the geometrical center of the free layer,
wherein the separation between the free layer and the bias magnet is less than about 5 nanometers.
14. A disk drive, comprising:
a magnetic disk;
a write element for writing information to said disk;
a magnetoresistive sensor for reading information from said disk, wherein said magnetoresistive sensor includes:
a sensor stack including a ferromagnetic free layer, said ferromagnetic free layer having a first and second end;
a nonmagnetic spacer layer disposed at said first end of said sensor stack, said nonmagnetic spacer layer having a thickness;
a bias magnet disposed over said nonmagnetic spacer layer at said first end of said ferromagnetic free layer, wherein said bias magnet includes a substantially vertical end wall and provides a magnetic stabilization field affecting said free layer, said magnetic stabilization field having a magnitude;
wherein said thickness of said nonmagnetic spacer layer is adjusted such that said magnitude of said magnetic stabilization field is within a preselected range of values;
wherein the free layer includes a geometrical center, each bias magnet includes a geometrical center, wherein the geometrical centers of the bias magnets are offset from the geometrical center of the free layer
wherein the separation between the free layer and the bias magnet is less than about 5 nanometers.