Molds for wafer scale molding of protective caps
View Patent ↗Two molds ( 102, 104 ) are provided formed of semiconductor material. The molds ( 102, 104 ) have substantially planar working faces ( 108, 110 ) into which recesses ( 106, 112 ) are formed. In use the molds ( 102, 104 ) are pressed together with the working faces ( 108, 110 ) opposed so the recesses ( 106, 112 ) form mold cavities. The molds ( 102, 104 ) only contact each other in the plane of the working faces ( 108, 110 )
1. An apparatus for molding a sheet of thermoplastic material into an array of microstructures comprising two mold wafers each having a working face and rear face, wherein:
the working faces have one or more micro fabricated recesses which, when the working faces are placed face to face, define at least one cavity between the mold wafers for receiving the sheet of thermoplastic material;
the recesses are configured such that the mold wafers only contact each other on the working faces, when the working faces are placed face to face;and
the mold wafers are of a material which is substantially transparent to radiation for heating the thermoplastic material.
2. Apparatus as claimed in claim 1 wherein;
in plan view one of the mold wafers has at least one first recess formed in the respective working face for each cavity and the other mold wafer has at least one first groove formed in the respective working face for each cavity; and
when the two mold wafers are in use, the at least one first recess defines a central portion of the cavity and the at least one first groove defines a perimeter wall portion of the cavity extending from the edges of the central portion.
3. Apparatus as claimed in claim 1 wherein one of the mold wafers has a recess therein having a base and one or more pillars of the mold material extending from the base to the plane of the respective working face.
4. Apparatus as claimed in claim 1 , wherein the working faces have been polished using conventional semiconductor wafer polishing techniques and the recesses have been formed using conventional semiconductor etching techniques.