Method for forming pattern on substrate and method for fabricating liquid crystal display using the same

1. A method of forming patterns, comprising:

forming a first material layer;

forming a first pattern by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer;

forming a second material layer on the first pattern; and

forming a second pattern by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer, the at least one shot boundary line in the second photo etching spaced apart from the at least one shot boundary line in the first photo etching,

wherein the number of shots for the first pattern is different from the number of shots for the second pattern.

2. The method of claim 1 , further comprising

forming a material layer on the first and the second patterns; and

forming a pattern by performing a photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the material layer, the at least one shot boundary line in the photo etching spaced apart from the at least one shot boundary line in the first photo etching and the at least one shot boundary line in the second photo etching.

3. The method of claim 2 , wherein the formation of a material layer and the formation of a pattern are repeated to form a plurality of patterns.

4. A method of manufacturing a liquid crystal display panel, comprising:

forming a first metal layer on a substrate;

forming a gate wire including a gate line and a gate electrode by performing a first photo etching including divisional light exposure with at least two areas across at least one first shot boundary line on the first metal layer;

forming a gate insulating film on the gate wire;

forming a semiconductor layer on the gate insulating layer;

forming a semiconductor pattern by performing a second photo etching including divisional light exposure with at least two areas across at least one second shot boundary line on the semiconductor layer, the at least one second shot boundary line spaced apart from the at least one first shot boundary line;

forming a second metal layer on the gate insulating film and the semiconductor pattern;

forming a data wire including a data line, source and drain electrodes by performing a third photo etching including divisional light exposure with at least two areas across at least one third shot boundary line on the second metal layer, the at least one third shot boundary line spaced apart from the at least one first and second boundary lines;

forming a passivation film on the semiconductor pattern and the data wires;

forming a contact hole exposing the drain electrode by performing a fourth photo etching including divisional light exposure with at least two areas across at least one fourth shot boundary line on the passivation film, the at least one fourth shot boundary line spaced apart from the at least one first to third boundary lines;

forming a transparent conductive layer on the passivation film and the drain electrode; and

forming a pixel electrode corrected to the drain electrode by performing a fifth photo etching including divisional light exposure with at least two areas across at least one fifth shot boundary line on the transparent conductive layer, the at least one fifth shot boundary line spaced apart from the at least one first to fourth boundary lines,

wherein in the first to fifth photo etchings are performed by using first to fifth masks, respectively, each mask having a plurality of mask patterns; and

wherein the mask patterns of at least two of the first to fifth masks have widths such that the number of shots in the light exposure using the at least two of the first to fifth masks are different from each other.

5. The method of claim 4 , wherein each of the first to fifth mask comprises a first mask pattern defining an exposure area at a central portion of the substrate, and second and third mask patterns defining exposure areas at a left portion and a right portion of the substrate, respectively.

6. The method of claim 5 , wherein widths of at least two of the first to third mask patterns in at least two of the first to fifth mask has two sub mask patterns.

7. The method of claim 4 , further comprising:

forming a material layer for a black matrix on an opposite substrate facing the substrate; and

forming a black matrix by performing a sixth photo etching including divisional light exposure with at least two areas across at least one sixth shot boundary line on the material layer for a black matrix, the at least one sixth shot boundary line spaced apart from the at least one first to fifth boundary lines.

8. The method of claim 4 , further comprising:

forming a transparent conductor layer on an opposite substrate facing the substrate; and

forming a common electrode by performing a sixth photo etching including divisional light exposure with at least two areas across at least one sixth shot boundary line on the transparent conductor layer, the at least one sixth shot boundary line spaced apart from the at least one first to fifth boundary lines.

9. A method of forming patterns, comprising:

forming a first material layer;

forming a first pattern by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer;

forming a second material layer on the first pattern; and

forming a second pattern by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer, the at least one shot boundary line in the second photo etching spaced apart from the at least one shot boundary line in the first photo etching,

wherein the number of mask patterns for the first pattern is different from the number of mask patterns for the second pattern.

10. The method of claim 9 , further comprising

forming a material layer on the first and the second patterns; and

forming a pattern by performing a photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the material layer the at least one shot boundary line in the photo etching spaced apart from the at least one shot boundary line in to first photo etching and the at least one shot boundary line in the second photo etching.

11. The method of claim 10 , wherein the formation of a material layer and the formation of a pattern are repeated to form a plurality of patterns.

12. The method of claim 10 , wherein the first and second photo etchings are performed by using first and second masks, respectively, each mask having a plurality of mask patterns; and

wherein widths of the mask patterns of the first and second masks are determined such that the number of shots for the first pattern is different from the number of shots for the second pattern.