Semiconductor memory device for preventing a late write from disturbing a refresh operation
View Patent ↗A semiconductor memory device is provided for preventing a late-write from disturbing a refresh operation and also for reducing a current consumption in a write cycle with execution of the late-write. Upon a transition of an address ADD, an address transition detector circuit detects this address transition. Upon receipt of a result of detection by the address transition detector circuit, a state control circuit judges an operation to be executed, from an output enable signal /OE and a write enable signal /WE, and then outputs any of a read statement RS, a write statement WS, and a refresh statement FS. According to a clock signal ACLK, input signals such as addresses are taken for executions of operations based on the statements.
1. A semiconductor memory device having a memory cell array comprising memory cells which need refresh scheduling and receiving asynchronously a write request and write data together with an access address, wherein the semiconductor memory device comprises:
an access means for executing a refresh of said memory cell array after a write request to write data to the access address;
a write control means for controlling said access means to execute a late write operation, after said write request has been issued, using said access address and said data given in connection with said write request; and
a read inhibit control means for inhibiting a read operation based on an output enable signal, said output enable signal being provided in a write cycle in which execution of said late write operation occurs.
2. The semiconductor memory device as claimed in claim 1 , wherein retained data, which are to be written through said late write operation, are read out if said output enable signal is activated without any transition of said access address in said write cycle having said execution of said late write operation.
3. The semiconductor memory device as claimed in claim 1 , wherein data are read out from a memory cell subject to an access in a page mode by triggering an output enable signal in the write cycle.
4. The semiconductor memory device as claimed in claim 1 , wherein data are read out from a memory cell designated by the current cycle prior to a refresh in a cycle free of any read operation.
5. A method for manufacturing a semiconductor memory device having a memory cell array comprising memory cells which need refresh scheduling and receiving a write request and write data together with an access address, wherein the method comprising steps of:
executing a refresh of said memory cell array after a write request to write data to the access address;
performing a late write operation, after said write request has been issued, using said access address and said data given in connection with said write request; and
inhibiting a read operation based on an output enable, said output enable signal being provided in a write cycle in which execution of said late write operation occurs.
6. The method as claimed in claim 5 , further comprising a step of:
reading out retained data, which are to be written through said late write operation, is said output enable signal is activated without any transition of said access address to said write cycle having said execution of said late write operation.
7. The method as claimed in claim 5 , further comprising a step of:
reading out data from a memory cell subject to an access in a page mode by triggering an output enable signal in the write cycle.
8. The method as claimed in claim 5 , further comprising a step of:
reading out data from a memory cell designated by the current cycle prior to a refresh in a cycle free of any read operation.