Thin-film solar cell fabricated on a flexible metallic substrate
View Patent ↗A thin-film solar cell ( 10 ) is provided. The thin-film solar cell ( 10 ) comprises a flexible metallic substrate ( 12 ) having a first surface and a second surface. A back metal contact layer ( 16 ) is deposited on the first surface of the flexible metallic substrate ( 12 ). A semiconductor absorber layer ( 14 ) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer ( 14 ) forms a heterojunction structure and a grid contact ( 24 ) deposited on the heterjunction structure. The flexible metal substrate ( 12 ) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate ( 12 ), depositing a semiconductor absorber layer ( 14 ) on the aluminum substrate ( 12 ), and insulating the aluminum substrate ( 12 ) from the semiconductor absorber layer ( 14 ) to inhibit reaction between the aluminum substrate ( 12 ) and the semiconductor absorber layer ( 14 ).
1. A thin-film solar cell comprising:
a flexible aluminum substrate having an anodized first surface;
an electrically conductive back metal contact layer deposited on the anodized first surface of the flexible aluminum substrate wherein the anodized first surface electrically insulates the aluminum substrate from the electrically conductive back metal contact layer;
a semiconductor absorber layer deposited on the back metal contact wherein the semiconductor absorber layer is constructed from a film selected from the group consisting of Cu(In,Ga)Se 2 , CuInSe 2 , CuGaSe 2 , CuInS 2 , and Cu(In,Ga)S 2 ;
a photoactive film deposited on the semiconductor absorber layer forming a heterojunction structure; and
a grid contact deposited on the heterojunction structure.
2. A monolithically integrated module comprising a plurality of the thin-film solar cells of claim 1 .
3. The monolithically integrated module of claim 2 wherein the anodized first surface electrically isolates the aluminum substrate from the back metal contact layer of each of the plurality of thin-film solar cells to thereby allow for interconnection of the solar cells.
4. The thin-film solar cell of claim 1 wherein the back metal contact is constructed from a Molybdenum (Mo) material.
5. The thin-film solar cell of claim 4 wherein the Molybdenum material has a thickness between approximately 0.1 μm and approximately 1.0 μm.
6. The thin-film solar cell of claim 1 wherein the aluminum substrate comprises an anodized second surface.
7. The thin-film solar cell of claim 1 wherein the photoactive film is constructed from Cadmium Sulfide (CdS).
8. The thin-film solar cell of claim 1 and further comprising:
a transparent conducting oxide for collecting current.
9. The thin-film solar cell of claim 1 wherein the grid contact is constructed from metal.
10. The thin-film solar cell of claim 1 and further comprising:
an (In,Ga) 2 Se 3 layer deposited between the back metal contact layer and the semiconductor absorber layer.
11. The thin-film solar cell of claim 1 wherein the anodized first surface comprises Al 2 O 3 formed by anodizing the substrate.
12. The thin-film solar cell of claim 1 and further comprising:
an insulation layer of one or more oxides of silicon, deposited on the anodized first surface.
13. The thin-film solar cell of claim 1 and further comprising:
an insulation layer of one or more oxides of silicon, deposited between the substrate and the back metal contact layer.
14. The thin-film solar cell of claim 1 wherein at least the anodized first surface of the aluminum substrate is anodized thereby forming Al 2 O 3 .
15. The thin-film solar cell of claim 6 wherein the anodized second surface of the aluminum substrate is anodized thereby forming Al 2 O 3 .
16. The thin-film solar cell of claim 6 wherein the anodized second surface of the substrate is protected with one or more oxides of silicon.
17. A solar cell for converting solar radiation into usable electrical energy, the solar cell comprising:
an aluminum substrate;
a semiconductor absorber;
an electrically conductive back metal contact layer between the substrate and the semiconductor absorber;
Al 2 O 3 between the substrate and the back metal contact layer, the Al 2 O 3 formed by anodizing the aluminum substrate wherein the Al 2 O 3 electrically insulates the aluminum substrate from the electrically conductive back metal contact layer; and
an In 2 Se 3 layer deposited between the back metal contact layer and the semiconductor absorber.
18. The solar cell of claim 17 wherein the semiconductor absorber is a Cu(In, Ga)Se 2 (CIGS) thin film.
19. The solar cell of claim 17 wherein the back metal contact layer comprises Molybdenum (Mo).
20. The solar cell of claim 17 wherein the anodizing occurs without use of an adhesion layer.
21. The solar cell of claim 17 and further comprising:
an insulation layer of one or more oxides of silicon on the Al 2 O 3 between the Al 2 O 3 and the back contact layer.
22. A monolithically integrated module comprising a plurality of the solar cells of claim 17 .
23. A method of constructing a thin-film solar cell, the method comprising:
providing an aluminum substrate;
depositing a Cu(In, Ga)Se 2 (CIGS) thin film semiconductor absorber layer on the aluminum substrate; and
insulating the aluminum substrate from the semiconductor absorber layer to inhibit reaction between the aluminum substrate and the semiconductor absorber layer wherein the insulating comprises anodizing a surface of the aluminum substrate to thereby form a layer of Al 2 O 3 that insulates the aluminum substrate from the semiconductor absorber layer.
24. The method of claim 23 wherein the anodizing occurs without providing an adhesion layer.
25. The method of claim 23 wherein the aluminum substrate is insulated from the semiconductor absorber layer by a back metal contact layer.
26. The method of claim 23 and further comprising:
depositing an In 2 Se 3 layer between the substrate and the semiconductor absorber layer.
27. The method of claim 25 and further comprising:
depositing an insulation layer of one or more oxides of silicon, on the layer of Al 2 O 3 between the layer of Al 2 O 3 and the back contact layer.
28. A thin-film solar cell comprising:
an aluminum substrate that comprises an electrically insulating layer of Al 2 O 3 formed by anodizing the aluminum substrate;
a semiconductor absorber layer; and
an (In,Ga) 2 Se 3 layer deposited between the substrate and the semiconductor absorber layer.
29. The thin-film solar cell of claim 28 further comprising a back metal contact layer between the substrate and the semiconductor absorber layer.
30. The thin-film solar cell of claim 29 wherein the (In,Ga) 2 Se 3 layer is deposited on the back metal contact layer between the back metal contact layer and the semiconductor absorber layer.
31. A monolithically integrated module comprising a plurality of the thin-film solar cells of claim 28 .
32. A method of constructing a thin-film solar cell, the method comprising:
providing an aluminum substrate that comprises an electrically insulating layer of Al 2 O 3 formed by anodizing the aluminum substrate;
depositing an In 2 Se 3 layer on a layer supported by the substrate; and
depositing a semiconductor absorber layer on the In 2 Se 3 layer.
33. The method of claim 32 further comprising constructing a monolithically integrated module of a plurality of the thin-film solar cells.