Integrated semiconductor mixer
View Patent ↗An integrated semiconductor mixer includes a substrate ( 10 ), a radio-frequency balun ( 12 ) disposed on the substrate ( 10 ), a local oscillator balun ( 14 ) disposed on the substrate ( 10 ), an intermediate-frequency port ( 16 ) disposed on the substrate ( 10 ), and a mixer diode array ( 18 ), disposed on the substrate ( 10 ), that communicates with the radio-frequency balun ( 12 ), the local oscillator balun ( 14 ), and the intermediate-frequency port ( 16 ), in which the radio-frequency balun ( 12 ) is shielded from the local oscillator balun ( 14 ) by plated holes ( 20 ).
1. An integrated semiconductor mixer, comprising:
a substrate ( 10 );
a radio-frequency balun ( 12 ) disposed on the substrate ( 10 );
a local oscillator balun ( 14 ) disposed on the substrate ( 10 );
an intermediate-frequency port ( 16 ) disposed on the substrate ( 10 ); and
a mixer diode array ( 18 ), disposed on the substrate ( 10 ), that communicates with the radio-frequency balun ( 12 ), the local oscillator balun ( 14 ), and the intermediate-frequency port ( 16 ),
wherein the radio-frequency balun ( 12 ) is shielded from the local oscillator balun ( 14 ) by plated holes ( 20 ),
wherein single-row plated holes ( 20 ) communicate with one another by means of resistors ( 26 ).
2. The integrated semiconductor mixer of claim 1 , wherein at least one row ( 22 , 24 ) of plated holes ( 20 ) is provided.
3. The integrated semiconductor mixer of claim 1 , wherein a first row ( 22 ) of plated holes ( 20 ) is disposed in the vicinity of the radio-frequency balun ( 12 ), and wherein a second row ( 24 ) of plated holes ( 20 ) is disposed in the vicinity of the local oscillator balun ( 14 ).
4. An integrated semiconductor mixer, comprising:
a substrate ( 10 );
a radio-frequency balun ( 12 ) disposed on the substrate ( 10 );
a local oscillator balun ( 14 ) disposed on the substrate ( 10 );
an intermediate-frequency port ( 16 ) disposed on the substrate ( 10 ); and
a mixer diode array ( 18 ), disposed on the substrate ( 10 ), that communicates with the radio-frequency balun ( 12 ), the local oscillator balun ( 14 ), and the intermediate-frequency port ( 16 ),
wherein the radio-frequency ( 12 ) is shielded from the local oscillator balun ( 14 ) by plated holes ( 20 ),
wherein a first row ( 22 ) of plated holes ( 20 ) is disposed between the radio-frequency balun ( 12 ) and the mixer diode array ( 18 ), and
wherein a second row ( 24 ) of plated holes ( 20 ) is disposed between the local oscillator balun ( 14 ) and the mixer diode array ( 18 ).