Receiver and composite component having local oscillator components and mixing circuit integrally formed on semiconductor substrate
View Patent ↗A receiver and a composite component for preventing noise produced by sneaking of a local oscillation signal. An FM receiver comprises a high-frequency amplifier circuit 11 , a mixing circuit 12 , a local oscillator 13 , intermediate-frequency filters 14 and 16 , an intermediate-frequency amplifier circuit 15 , a limit circuit 17 , an FM detection circuit 18 , and a stereo demodulation circuit 19 . The mixing circuit 12 and the local oscillator 13 constitute a one-chip composite component 30 integrally formed on a semiconductor substrate. The frequency of the local oscillation signal is set so that the difference of frequency between the local oscillation signal and a modulated wave signal may be smaller than the occupied bandwidth of the modulated wave signal.
1. A receiver having a high-frequency amplifier circuit for amplifying a modulated wave signal received via an antenna, a local oscillator for generating a predetermined local oscillation signal, and a mixing circuit for mixing and outputting the modulated wave signal amplified by said high-frequency amplifier circuit and the local oscillation signal outputted from said local oscillator, characterized in that all said local oscillator components and said mixing circuit are integrally formed on a semiconductor substrate, and
characterized in that a power supply circuit for supplying an operating voltage to said local oscillator and said mixing circuit respectively is provided to the outside of said semiconductor substrate, and a filter for eliminating said local oscillation signal and a harmonic component thereof is inserted into a power supply line and a ground line connected to said power supply circuit inside said semiconductor substrate.
2. The receiver according to claim 1 , characterized in that it further comprises a phase-locked loop circuit constituting a frequency synthesizer together with said local oscillator, and said phase-locked loop circuit is integrally formed on said semiconductor substrate.
3. The receiver according to claim 1 , characterized in that a difference between a frequency of said local oscillation signal and a carrier frequency of said modulated wave signal is smaller than an occupied frequency bandwidth of said modulated wave signal.
4. The receiver according to claim 1 , characterized in that at least said mixing circuit and said local oscillator are formed into one chip by using a CMOS process or a MOS process.
5. A composite component for providing frequency conversion of a modulated wave signal, characterized in that it comprises a local oscillator for generating a predetermined local oscillation signal and a mixing circuit for mixing and outputting said modulated wave signal and the local oscillation signal outputted from said local oscillator, and all said local oscillator components and said mixing circuit are integrally formed on a semiconductor substrate, and
characterized in that a power supply circuit for supplying an operating voltage to said local oscillator and said mixing circuit respectively is provided to the outside of said semiconductor substrate, and a filter for eliminating said local oscillation signal and a harmonic component thereof is inserted into a power supply line and a ground line connected to said power supply circuit inside said semiconductor substrate, and
characterized in that a difference between a frequency of said local oscillation signal and a carrier frequency of said modulated wave signal is smaller than an occupied frequency bandwidth of said modulated wave signal.
6. The composite component according to claim 5 , characterized in that it further comprises a phase-locked loop circuit constituting a frequency synthesizer together with said local oscillator, and said phase-locked loop circuit is integrally formed on said semiconductor substrate.
7. The composite component according to claim 5 , characterized in that at least said mixing circuit and said local oscillator are formed into one chip by using a CMOS process or a MOS process.