IP Library Granted Patent US 6,879,193
Granted Patent B2
US 6,879,193 · App. 10/484,904 · Granted Apr 12, 2005

Semiconductor integrated circuit and its reset method

Assignee: Matsushita Electric Industrial Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,879,193
App. No.
10/484,904
Granted
Apr 12, 2005
Kind
B2
Abstract

In a circuit block 110 to be an object of power-off, voltage detecting circuits 130 and 134 are disposed near power supply terminals 140 and 142 , respectively, and voltage detecting circuits 132 and 136 are disposed at given positions far from the terminals 140 and 142 , respectively, on power lines 141 and 143 of two electric-supply systems. The voltage detecting circuits are each made of MOS transistors only. At turning on the power from a power supply circuit 150 again, after all the voltage detecting circuits have detected arrival of power-supply voltages at a predetermined potential, a reset signal generating circuit 160 stops the input of a reset signal to the circuit block 110. Accordingly, since the reset state is stopped after the arrival of the power-supply voltages at the predetermined voltage, a semiconductor integrated circuit is initialized normally. This provides a semiconductor integrated circuit capable of generating a power-on reset signal appropriately.

Claims (32)

1. A semiconductor integrated circuit, characterized by comprising:

a circuit block including a power line of at least one electrical system and a plurality of internal semiconductor devices to which power is supplied from the power line;

a plurality of voltage detecting means each connected to the power line at a given position on the power line and each outputting a voltage detection signal at a given potential when the potential at the given position on the power line is a predetermined potentials;

first power supply means for supplying or shutting off power to the circuit block in accordance with a power-supply control signal input from outside;

reset signal generating means for receiving the voltage detection signals from the plurality of voltage detecting means and outputting a reset signal to the circuit block when all the voltage detection signals from the plurality of voltage detecting means are not at the a given potential, while stopping the output of the reset signal to the circuit block after all the voltage detection signals are at the given potential; and

second power supply means for supplying power to the reset signal generating means.

2. The semiconductor integrated circuit of claim 1 , characterized in that each of the plurality of voltage detecting means includes voltage detecting means connected to the power line at a given position on the power line farthest from a starting point of power supply.

3. The semiconductor integrated circuit of claim 1 , characterized in that:

each of the plurality of voltage detecting means includes a p-MOS transistor and an n-MOS transistor;

the power line is connected to the drain of the p-MOS transistor;

the gate of the p-MOS transistor and the source and gate of the n-MOS transistor are grounded; and

the source of the p-MOS transistor is connected to the drain of the n-MOS transistor at a connection point, and the potential at the connection point is output as the voltage detection signal.

4. The semiconductor integrated circuit of claim 1 , characterized in that

the reset signal generating means includes:

a logic gate for receiving the voltage detection signals from the plurality of voltage detecting means and detecting that all the voltage detection signals are at the given potential; and

a delay unit for delaying the output of the logic gate by a given time,

wherein the output of the delay unit is output to the circuit block as the reset signal.

5. The semiconductor integrated circuit of claim 1 , characterized in that

the reset signal generating means includes:

a logic gate for receiving the voltage detection signals from the plurality of voltage detecting means and detecting that all the voltage detection signals are at the given potential; and

flip-flop circuits with a plurality of stages for sequentially delaying the output of the logic gate with a clock signal input from outside;

the output of the flip-flop circuit at the final stage is output to the circuit block as the reset signal.

6. The semiconductor integrated circuit of claim 1 , characterized in that the first power supply means and the second power supply means are integrated on a semiconductor substrate.

7. The semiconductor integrated circuit of claim 1 , characterized in that the circuit block and the reset signal generating means are integrated on a semiconductor substrate.

8. The semiconductor integrated circuit of claim 1 , characterized in that the circuit block, the reset signal generating means, the first power supply means and the second power supply means are integrated on a semiconductor substrate.

9. A semiconductor-integrated-circuit-resetting method for resetting, to an initial state, a circuit block provided in a semiconductor integrated circuit including: a power line of at least one electrical system; and the circuit block including a plurality of internal semiconductor devices to which power is supplied from the power line, the method being characterized in that:

power-supply potentials are detected at a plurality of positions on the power line;

whether or not all the power-supply potentials at the plurality of positions on the power line reach a predetermined potential is detected; and

a reset signal to be output to the circuit block is stopped when the result of the detection is true.

10. The semiconductor-integrated-circuit-resetting method of claim 9 , characterized in that:

an inverter including a p-MOS transistor and an n-MOS transistor is provided; and

the potentials on the power line are detected using a potential detecting circuit in which the drain of the p-MOS transistor is connected to the power line.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC CORPORATION
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0917 →
CHANGE OF NAME Recorded Mar 18, 2020
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 052184/0943 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2004
From: OKAMOTO, MINORU; MARUI, SHINICHI; OKABAYASHI, KAZUHIRO
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 015276/0600 →
Priority Claims (1)
JP 2002-053325 · Feb 28, 2002 · national
Continuity (1)
Related Publication 20040169974A1 · Sep 2, 2004