Providing photonic control over wafer borne semiconductor devices
Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer ( 1700 ) having a substrate ( 1720 ), at least one active layer ( 1765 ) and at least one surface layer ( 1710 ). Photonic flow control can be achieved through the formation of trenches ( 1725 ) and/or insulating implants ( 1730 ) formed in said wafer ( 1700 ), whereby active regions ( 1760 ) are defined by trenches ( 1725 ) that operate as nonconductive areas ( 1750 ). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.
1. A method for providing photonic flow control over VCSEL devices borne by a semiconductor wafer having a substrate, at least one active component layer and a surface layer during burn-in, comprising the step of:
forming at least one trench into said semiconductor wafer, thereby defining nonconductive regions and further defining boundaries between active component regions thereby separated by said at least one trench;
performing a burn-in for a plurality of the devices borne in the semiconductor wafer at the same time using a first contact plate connected to a first side of the semiconductor wafer and a second contact plate connected to a second side of the semiconductor wafer, the surfaces of the first and second contact plates clamping the semiconductor wafer, wherein during the burn-in, the first and second contact plates are each provide a single common electrical contact to all devices that are borne in the semiconductor wafer and undergo the burn-in process; and
wherein the at least one trench provides photonic flow control during the burn-in.
2. The method of claim 1 , wherein said step of forming at least one trench includes the step of etching said at least one trench into said surface layer and said at least one active component layer.
3. The method of claim 1 , wherein said step of forming at least one trench includes the step of milling said at least one trench into said surface layer and said at least one active component layer.
4. The method of claim 1 , wherein said step of forming at least one trench includes the step of engraving said at least one trench into said surface layer and said at least one active component layer.
5. A method of claim 1 , further comprising the step of:
implanting isolation material into said at least one trench.
6. The method of claim 5 , wherein said isolation material is an optical absorbing material.
7. A method as in claim 1 , wherein a pliable conductive layer is positioned adjacent the semiconductor wafer during the burn-in process.
8. A method for providing parasitic current control over photonic devices represented by at least one active component layer borne by a semiconductor wafer, said semiconductor layer having a substrate, said at least one active component layer and at least one surface layer during burn-in, comprising the steps of:
forming at least one trench extending from said surface layer through said at least one active component layer near said substrate, wherein said at least one trench thereby defines nonconductive regions and sets forth a nonconductive area between active component regions that operate as photonic devices on the semiconductor wafer;
implanting photonic isolation material into said at least one trench formed between said photonic devices represented by said is active component regions, wherein said at least one trench extends from said surface layer through said at least one active component layer and
performing a burn-in process for the photonic devices borne by the semiconductor wafer at the same time using contacts that include a pliable layer, wherein the pliable layer provides a single electrical contact to all photonic devices on the semiconductor wafer that undergo the burn-in process;
wherein the at least one trench and the implanted photonic isolation material provide at least parasitic current control during the burn-in process.
9. The method of claim 8 , wherein said isolation material is an optical absorbing material.
10. The method of claim 8 , wherein said step of forming at least one trench includes the step of etching said at least one trench into said surface layer and said at least one active component layer towards said substrate.
11. The method of claim 10 , wherein said isolation material is an optical absorbing material.
12. The method of claim 8 , wherein said step of forming at least one trench includes the step of milling said at least one trench into said surface layer and said active component layers up to said substrate.
13. The method of claim 12 , wherein said isolation material is an optical absorbing material.
14. The method of claim 8 , wherein said step of forming at least one trench includes the step of engraving said at least one trench into said surface layer and said at least one active component layer.
15. The method of claim 14 , wherein said isolation material is an optical absorbing material.
16. The method of claim 9 , wherein said step of forming at least one trench includes the step of etching said at least one trench into said surface layer and said at least one active component layer.
17. The method of claim 9 , wherein said step of forming at least one trench includes the step of milling said at least one trench into said surface layer and said at least one active component layer.
18. The method of claim 9 , wherein said step of forming at least one trench includes the step of engraving said at least one trench into said surface layer and said at least one active component layer.
19. A method as in claim 8 , wherein a pliable conductive layer is positioned adjacent the semiconductor wafer during the burn-in process.