IP Library Granted Patent US 7,129,691
Granted Patent B2
US 7,129,691 · App. 10/493,985 · Granted Oct 31, 2006

Current sensor and current sensor manufacturing method

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Quick Facts
Patent No.
US 7,129,691
App. No.
10/493,985
Granted
Oct 31, 2006
Kind
B2
Abstract

A low-cost, current sensor suitable for mass production and a manufacturing method thereof are provided. The current sensor is small with high sensitivity and can be packaged in a standard assembly line which is normally used when an integrated circuit is manufactured. Further, it is possible to obtain a sufficient shielding effect against a disturbance flux without degrading the detecting sensitivity of a flux. A first magnetic material 50 is bonded to the lower part of a current conductor 22 C. The first magnetic material 50 has the function of converging and amplifying a flux 3 generated by the current to be measured. A second magnetic material 51 is bonded above a magnetic sensor chip 20 . The second magnetic material 51 has a shielding function against a disturbance flux entering from the outside.

Claims (22)

1. A current sensor comprising:

a housing of molded plastics;

a metallic current conductor through which a current to be measured flows;

a magnetic field sensor chip containing at least one magnetic field detection element, the magnetic field sensor chip being placed on a side of the current conductor;

a flux concentrator placed on the magnetic field sensor chip for urging a flux generated by the current flowing through the current conductor to pass through the at least one magnetic field detection element;

a plurality of input and output terminals, each of the input and output terminals having an end that is electrically connected to a corresponding terminal of the magnetic field sensor chip, wherein a portion of the current conductor carrying the magnetic field sensor chip lies in a first plane and said ends of the input and output terminals lie in a second plane oriented substantially parallel to the first plane, and wherein a distance between the first and second plane substantially disappears or is substantially the same as a thickness of the magnetic field sensor chip;

a first magnetic material located on a backside of the current conductor, said backside located opposite to the side that the magnetic field sensor chip is placed on; and

a second magnetic material located above the magnetic field sensor chip.

2. The current sensor as claimed in claim 1 , wherein a position of the second magnetic material is set so as to satisfy 0.1α≦X≦3.6α where α represents a whole length of the flux concentrator along a direction of the flux generated by the current flowing through the current conductor and X represents a distance between a magnetic detecting surface of the at least one magnetic field detection element and the second magnetic material.

3. The current sensor as claimed in claim 1 , wherein the flux concentrator is composed of a pair of members having a gap of a predetermined width.

4. The current sensor as claimed in claim 2 , wherein the flux concentrator is composed of a pair of members having a gap of a predetermined width.

5. A method of manufacturing a current sensor, comprising the steps of:

forming a thin plate-like metal into a leadframe containing a current conductor and input and output terminals;

placing a magnetic field sensor chip containing at least one magnetic field detection element on a side of the current conductor;

connecting electrical terminals of the magnetic field sensor chip to the input and output terminals;

forming a plastic housing by molding the current conductor, the magnetic field sensor chip and the input and output terminals;

separating the current conductor and the input and output terminals from each other;

providing a first magnetic material on a backside of the current conductor, said backside being located opposite to the side that the magnetic field sensor chip is placed on; and

providing a second magnetic material located above the magnetic field sensor chip.

6. The method according to claim 5 , wherein a position of the second magnetic material is set so as to satisfy 0.1α≦X≦3.6α where α represents a whole length of the flux concentrator along a direction of the flux generated by the current flowing through the current conductor and X represents a distance between a magnetic detecting surface of the magnetic field detection element and the second magnetic material.

7. The method according to claim 5 , wherein the first and second magnetic material is provided before the plastic housing is formed.

8. The method according to claim 5 , wherein the second magnetic material is provided after the plastic housing has been formed.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2010
From: MELEXIS TECHNOLOGIES SA
To: MELEXIS TESSENDERLO NV
Reel/Frame 024741/0854 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2007
From: SENTRON AG
To: MELEXIS TECHNOLOGIES SA
Reel/Frame 019265/0612 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 18, 2005
From: ASAHI KASEI KABUSHIKI KAISHA
To: ASAHI KASEI EMD CORPORATION
Reel/Frame 016419/0512 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 29, 2004
From: SHIBAHARA, KOJI; YAMAGATA, YO; POPOVIC, RADIVOJE; RACZ, ROBERT
To: ASAHI KASEI EMD CORPORATION; SENTRON AG
Reel/Frame 015862/0275 →