Semiconductor device using low dielectric constant material film and method of fabricating the same
The semiconductor device is capable of coping with speedup of operation using a low dielectric constant material film other than silicon. The base ( 10 ) formed by the substrate ( 11 ) and the low dielectric constant material film ( 12 ) whose relative dielectric constant is lower than silicon is provided. The semiconductor element layer including the MOS transistor ( 30 ) is adhered onto the surface of the base ( 10 ) for stacking. The transistor ( 30 ) is formed by using the island-shaped single-crystal Si film ( 31 ) and buried in the insulator films ( 15 ), ( 16 ) and ( 17 ). The multilayer wiring structure ( 18 ) is formed on the semiconductor element layer and is electrically connected to the transistor ( 30 ). The electrode ( 20 ) functioning as a return path for the signals is formed on the back surface of the base ( 10 ). Instead of forming the electrode ( 20 ) on the base ( 10 ), the electrodes ( 20 A) may be arranged on the back surface of the base ( 10 A), configuring the base ( 10 A) as an interposer.
1. A semiconductor device comprising:
(a) a base having a first surface and a second surface located on an opposite side to the first surface;
the base including a low dielectric constant material film whose relative dielectric constant is lower than silicon;
(b) a first semiconductor element layer including a semiconductor element and an insulator film burying the semiconductor element;
the first semiconductor element layer being formed on or over the first surface of the base directly or by way of another layer;
(c) a first wiring layer formed on or over the first semiconductor element layer directly or by way of another layer; and
(d) an electrode formed on the second surface of the base;
the electrode forming a return path for a signal transmitted through the first wiring layer;
wherein the base, the first semiconductor element layer, and the first wiring layer constitute a three-dimensional stacked structure; and
the semiconductor element of the first semiconductor element layer is formed by using an island-shaped semiconductor film, where the semiconductor film has a limited dimension that realizes a necessary characteristic of the semiconductor element.
2. A device according to claim 1 , wherein the base includes a substrate made of insulator, semiconductor, or metal that does not hinder a characteristic of low dielectric constant of the low dielectric constant material film; and
the low dielectric constant material film is formed on the substrate.
3. A device according to claim 1 , wherein the base is formed by only the low dielectric constant material film.
4. A device according to claim 1 , wherein the insulator film burying the semiconductor element of the first semiconductor element layer is located opposite to the first surface of the base.
5. A device according to claim 1 , wherein an opposite surface of the first semiconductor element layer to the insulator film burying the semiconductor element is located opposite to the first surface of the base.
6. A device according to claim 1 , further comprising a second semiconductor element layer or a second wiring layer between the first surface of the base and the first semiconductor element layer; and
the first semiconductor element layer is formed over the first surface of the base by way of the second semiconductor element layer or the second wiring layer.
7. A device according to claim 1 , further comprising a second semiconductor element layer or a second wiring layer between the first semiconductor element layer and the first wiring layer; and
the first wiring layer is formed over the first semiconductor element layer by way of the second semiconductor element layer or the second wiring layer.
8. A device according to claim 1 , wherein the semiconductor element of the first semiconductor element layer is a field-effect transistor formed in the island-shaped semiconductor film; and
the transistor comprises a first gate electrode formed on one side of the semiconductor film and a second gate electrode formed on an opposite side of the semiconductor film to the first gate electrode.
9. A device according to claim 8 , wherein the first gate electrode of the field-effect transistor is located on a side of the base with respect to the island-shaped semiconductor film.
10. A device according to claim 1 , wherein the semiconductor element of the first semiconductor element layer is a field-effect transistor formed in the island-shaped semiconductor film; and
the transistor comprises a first gate electrode formed on one side of the semiconductor film.
11. A device according to claim 10 , wherein the first gate electrode of the field-effect transistor is located on a side of the base with respect to the island-shaped semiconductor film.
12. A semiconductor device comprising:
(a) a base having a first surface and a second surface located on an opposite side to the first surface;
the base including a low dielectric constant material film whose relative dielectric constant is lower than silicon;
(b) a first semiconductor element layer including a semiconductor element and an insulator film burying the semiconductor element;
the first semiconductor element layer being formed on or over the first surface of the base directly or by way of another layer;
(c) a first wiring layer formed on or over the first semiconductor element layer directly or by way of another layer; and
(d) electrodes formed on the second surface of the base;
(e) buried interconnections formed to penetrate through the base and to be contacted with the respective electrodes;
wherein the base, the first semiconductor element layer, and the first wiring layer constitute a three-dimensional stacked structure; and
the semiconductor element of the first semiconductor element layer is formed by using an island-shaped semiconductor film, where the semiconductor film has a limited dimension that realizes a necessary characteristic of the semiconductor element; and
the base, the electrodes, and the interconnections have a function of interposer.
13. A device according to claim 12 , wherein the base includes a substrate made of insulator, semiconductor, or metal that does not hinder a characteristic of low dielectric constant of the low dielectric constant material film; and
the low dielectric constant material film is formed on the substrate.
14. A device according to claim 12 , wherein the base is formed by only the low dielectric constant material film.