IP Library Granted Patent US 7,126,801
Granted Patent B2
US 7,126,801 · App. 10/495,601 · Granted Oct 24, 2006

Polarity protection implemented with a MOSFET

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Quick Facts
Patent No.
US 7,126,801
App. No.
10/495,601
Granted
Oct 24, 2006
Kind
B2
Abstract

A polarity protection circuit contains a metal oxide semiconductor field effect transistor (FET) that pets its control voltage via an electrical connection from supply voltage lines and a transistor that pets its control voltage via another connection from the supply voltage lines. When a supply voltage has a wrong polarity the FET is in a non-conducting state. If in the supply voltage lines during normal operation there occurs a short circuit that tends to chance a direction of the current, the transistor rapidly discharges a gate charge of the FET, and the current flow in the wrong direction is prevented.

Claims (12)

1. A polarity protection circuit to be used in a power supply arrangement where a power supply is connected via supply voltage lines to a load, and which polarity protection circuit has a first protective semiconductor switch and a second semiconductor switch, wherein

the first protective semiconductor switch is a metal oxide semiconductor field effect transistor, which control voltage is taken via a certain connection from said supply voltage lines, and

the second semiconductor switch is a transistor, which gets its control voltage from a point in the supply voltage line, which point is separated from the first semiconductor switch by an inductance, whereby the transistor is arranged to discharge the electric charge from the first semiconductor switch as a response to a change in the polarity of the voltage between the supply voltage lines.

2. A polarity protection circuit according to claim 1 , wherein the second semiconductor switch gets its control voltage from a point in the supply voltage line, which point has the most rapid change of potential indicated by an electric charge being due to a polarity change.

3. A polarity protection circuit according to claim 1 , wherein the first semiconductor switch has a source (S), a drain (D) and a gate (G), which are connected so that

the source (S) is connected to the negative terminal of the load,

a coil is connected between the drain (D) and the negative terminal of the power supply, and

a resistance is connected between the gate (G) and the positive supply line.

4. A polarity protection circuit according to claim 3 , wherein the second semiconductor switch has a base, a collector and an emitter, which are connected so that

the base is connected to a diode, which is connected to a point between the coil and the negative terminal of the power supply,

the collector is connected to the supply voltage line, which connects the negative terminal of the power supply to the negative terminal of the load, and

the emitter is connected to the gate (G) of the first semiconductor switch.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Oct 27, 2018
From: CERBERUS BUSINESS FINANCE, LLC
To: CORIANT OY (FORMERLY TELLABS OY)
Reel/Frame 047727/0035 →
SECURITY INTEREST Recorded Jul 20, 2015
From: CORIANT OY (FORMERLY KNOWN AS TELLABS OY
To: CERBERUS BUSINESS FINANCE, LLC, AS THE COLLATERAL AGENT
Reel/Frame 036132/0362 →
CHANGE OF NAME Recorded Feb 12, 2015
From: TELLABS OY
To: CORIANT OY
Reel/Frame 034980/0920 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2004
From: JOKINEN, SAMI
To: TELLABS OY
Reel/Frame 015754/0444 →