Sealing structure for display devices
View Patent ↗The invention relates to a sealing structure ( 6 ) suitable for a polymer-based electronic device ( 1 ), charaterized in that the sealing structure ( 6 ) comprises a first layer ( 7 ) of a first dielectric material formed on said device ( 1 ) and a second layer ( 8 ) of a second dielectric material formed on the first layer ( 7 ).
1. A sealing structure ( 6 ) for a display device ( 1 ), characterized in that the sealing structure ( 6 ) comprises a first layer ( 7 ) of a first dielectric material formed on said device ( 1 ), a second layer ( 8 ) of a second dielectric material formed on the first layer 97 ), at least one third layer of a third dielectric material is formed on top of the second layer, and a getter layer, wherein said sealing structure comprise an N-O-N- or O-N-O- structure and the getter layer is formed on top of one of the at least one O layers.
2. A sealing structure according to claim 1 , wherein said dielectric materials are transparent.
3. A sealing structure according to claim 1 , wherein at least an outer layer ( 8 , 9 ) facing a potential user comprises a dielectric material resistant to the atmosphere.
4. A sealing structure according to claim 1 , wherein the first and the third dielectric materials are essentially the same.
5. A sealing structure according to claim 4 , wherein the first and the third dielectric materials are silicon nitride.
6. A scaling structure according to claim 1 , wherein the second dielectric material is selected from among silicon oxide, silicon oxynitride, silicon oxidefluoride, titanium oxide, tantalum oxide, zirconium oxide, hafnium oxide, aluminium oxide, or any mixture thereof.
7. A method for sealing a display device ( 2 ), comprising the steps of:
forming a first layer ( 7 ) of a first dielectric material on said display device ( 1 ),
forming a second layer ( 8 ) of a second dielectric material on top of the first layer ( 7 ), and
forming at least one third layer of a third dielectric material on top of the second layer and a getter layer and wherein said first, second and third layers form an N-O-N- or O-N-O- structure and the getter layer is formed on top of one of the at least one O layers.
8. A method according to claim 7 , wherein the first and the third dielectric material are the same.
9. A method according to claim 7 , wherein said layers ( 7 , 8 , 90 are formed using a low-temperature plasma-enhanced CVD method.
10. A display device ( 1 ) comprising a substrate ( 5 ) and at least one sealing structure ( 6 ) according to claim 1 .
11. A display device according to claim 10 , wherein the at least one scaling structure is at least formed on the side of the display device ( 1 ) facing a potential user.
12. A display device according to claim 10 , wherein the at least one sealing structure is interposed between the display device and the substrate ( 3 ).