Integrated circuit and battery powered electronic device
View Patent ↗An integrated circuit ( 100 ) has a circuit portion ( 102 ) that can be switched to a standby mode through an enable transistor ( 104 ), which is coupled between an internal power supply line ( 120 ) and an external power supply line ( 130 ). The enable transistor ( 104 ) is controlled by control circuitry via a control line ( 160 ). The control line ( 160 ) is coupled to the gates of a first transistor ( 152 ) and a further transistor ( 154 ) of a logic gate ( 150 ). The substrate of the further transistor ( 154 ) is coupled to a backbias generator ( 170 ). Consequently, when the enable transistor ( 104 ) is switched off, the further transistor ( 154 ) is enabled and applies a substantial backbias to the gate of the enable transistor ( 104 ), thus dramatically reducing the leakage current from the circuit portion ( 102 ) through the enable transistor ( 104 ).
1. An integrated circuit ( 100 ), comprising:
an external power supply line ( 130 );
an internal power supply line ( 120 );
a circuit portion ( 102 ) coupled to the internal power supply line ( 120 );
an enable transistor ( 104 ) for coupling the internal power supply line ( 120 ) to the external power supply line ( 130 ); and
control means ( 150 , 160 ) coupled to a gate of the enable transistor ( 104 ) for switching the enable transistor ( 104 ) to a conductive state with a first gate voltage, and to a non-conductive state with a second gate voltage,
characterized in that the control means ( 150 , 160 ) are arranged to reduce a leakage current through the enable transistor ( 104 ) in the non-conductive state by biasing the gate with the second gate voltage, which is obtained from a back bias power supply line ( 140 ) which is separate from said external power supply line ( 130 ).
2. An integrated circuit ( 100 ) as claimed in claim 1 , characterized in that the control means ( 150 ) comprise a further transistor ( 154 ) having a substrate that is conductively insulated from a bulk substrate of the integrated circuit, the substrate being coupled to a bias voltage source ( 170 ), and the further transistor ( 154 ) being responsive to a control signal for switching the enable transistor ( 104 ) to a non-conductive state.
3. An integrated circuit ( 100 ) as claimed in claim 2 , characterized in that the bias voltage source ( 170 ) comprises a backbias generator being responsive to the control signal.
4. A battery-powered electronic device ( 200 ), comprising a power supply line ( 230 ) coupled to a contact ( 222 ) of a battery container ( 220 ), characterized in that the power supply line ( 230 ) is coupled to an external power supply line ( 130 ) of an integrated circuit ( 100 ) according to claim 1 .