IP Library Granted Patent US 7,378,151
Granted Patent B2
US 7,378,151 · App. 10/505,125 · Granted May 27, 2008

Semiconductor nanoparticle, and a process of manufacturing the same

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Quick Facts
Patent No.
US 7,378,151
App. No.
10/505,125
Granted
May 27, 2008
Kind
B2
Abstract

The invention provides a semiconductor nanoparticle comprising a semiconductor nanoparticle core on the surface of which electron-releasing groups are arranged, the semiconductor nanoparticle having a fluorescent property and water-solubility. The invention also provides a water-soluble semiconductor nanoparticle with an excellent fluorescent property that can be easily prepared by adding a surface-treating material for providing a semiconductor nanoparticle with one or more kinds of electron-releasing groups, and arranging the electron-releasing groups on the surface of the semiconductor nanoparticle core.

Claims (20)

1. A water-soluble semiconductor nanoparticle consisting of: a core made of one chemical compound; a first layer which contains electron-releasing groups directly arranged on a surface of the core; and a second layer made of an ionic compound which is provided on the first layer in order to stablize the first layer,

wherein said electron-releasing groups are of at least one type selected from the group consisting of —OR, —OCH 2 R, —OCOCH 2 R, —NHR, —N(CH 2 R) 2 , —NHCOCH 2 R, —CH 2 R, and —C 6 H 4 R, and R is one selected from the group consisting of hydrogen and substituted or unsubstituted hydrocarbon groups,

wherein the ionic compound is of at least one type selected from the group consisting of ammonia, primary amines (R 1 NH 2 ), secondary amines (R 1 Rith 2 NH), tertiary amines (R 1 R 2 R 3 N), quaternary ammonium compounds (R 4 R 5 R 6 R 7 N + ), and R 1 to R 7 are each selected from the group consisting of hydrogen and substituted or unsubstituted hydrocarbon groups,

wherein said first layer and said second layer are formed from two separate surface treatments, and

wherein said semiconductor nanoparticle has a fluorescent property with increased bandgap fluorescence by decreasing defective fluorescence.

2. The semiconductor nanoparticle according to claim 1 , wherein a material of the core of the semiconductor nanoparticle is selected from the group consisting of ZnO, ZnS, ZnSe, ZnTe, Cod, CdS, CdMnS, CdSe, CdMnSe, CdTe, CdMnTe, HgS, HgSe, HgTe, InP, InAs, InSb, InN, GaN, GaP, GaAs, GaSb, TiO 2 , WO 3 , PbS, PbSe, MgTe, AlAs, AlP, AlSb, AlS, Ge, and Si.

3. A fluorescent reagent comprising a semiconductor nanoparticle consisting of a core made of one chemical compound; a first layer which contains electron-releasing groups directly arranged on a surface of the core; and a second layer made of an ionic compound which is provided on the first layer in order to stablize the first layer,

wherein said electron-releasing groups are of at least one type selected from the group consisting of —OR, —OCH 2 R, —OCOCH 2 R, —NHR, —N(CH 2 R) 2 , —NHCOCH 2 R, —CH 2 R, and —C 5 H 4 R, and R is one selected from the group consisting of hydrogen and substituted or unsubstituted hydrocarbon groups,

wherein the ionic compound is of at least one type selected from the group consisting of ammonia, primary amines (R 1 NH 2 ), secondary amines (R 1 R 2 NH), tertiary amines (R 1 R 2 R 3 N), quaternary ammonium compounds (R 4 R 5 R 6 R 7 N + ), and R 1 to R 7 are each selected from the group consisting of hydrogen and substituted or unsubstituted hydrocarbon groups,

wherein said first layer and said second layer are formed from two separate surface treatments, and

wherein said semiconductor nanoparticle has a fluorescent property with increased bandgap fluorescence by decreasing defective fluorescence.

4. The fluorescent agent according to claim 3 , wherein a material of the core of said semiconductor nanoparticle is selected from the group consisting of ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdMnS, CdSe, CdMnSe, CdTe, CdMnTe, HgS, HgSe, HgTe, InP, InAs, InSb, InN, GaN, GaP, GaAs, GaSb, TiO 2 , WO 3 , PbS, PbSe, MgTe, AlAs, AlP, AlSb, AlS, Ge, and Si.

5. The fluorescent agent according to claim 3 , wherein said semiconductor nanoparticle is water-soluble.

6. An optical device comprising a water-soluble semiconductor nanoparticle consisting of a core made of one chemical compound; a first layer which contains electron-releasing groups directly arranged on a surface of die core; and a second layer made of an ionic compound which is provided on the first layer in order to stablize the first layer,

wherein said electron-releasing groups are of at least one type selected from the group consisting of —OR, —OCH 2 R, —OCOCH 2 R, —NHR, —N(CH 2 R) 2 , —NHCOCH 2 R, CH 2 R, and —C 6 H 4 R, and R is one selected from the group consisting of hydrogen and substituted or unsubstituted hydrocarbon groups,

wherein the ionic compound is of at least one type selected from the group consisting of ammonia, primary amines (R 1 NH 2 ), secondary amines (R 1 R 2 NH), tertiary amines (R 1 R 2 R 3 N), quaternary ammonium compounds (R 4 R 5 R 6 R 7 N + ), and R 1 to R 7 are each selected from the group consisting of hydrogen and substituted or unsubstituted hydrocarbon groups,

wherein said first layer and said second layer are formed from two separate surface treatments, and

wherein said semiconductor nanoparticle has a fluorescent property with increased bandgap fluorescence by decreasing defective fluorescence.

7. The optical device according to claim 6 , wherein a material of the core of said semiconductor nanoparticle is selected from the group consisting of ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdMnS, CdSe, CdMnSe, CdTe, CdMnTe, HgS, HgSe, HgTe, InP, InAs, InSb, InN, GaN, GaP, GaAs, GaSb, TiO 2 , WO 3 , PbS, PbSe, MgTe, AlAs, AlP, AlSb, AlS, Ge, and Si.

8. The optical device according to claim 6 , wherein said semiconductor nanoparticle is water-soluble.

Assignments (3)
ABSORPTION-TYPE COMPANY SPLIT AND DEMERGER Recorded Aug 20, 2015
From: HITACHI SOLUTIONS, LTD.
To: HITACHI, LTD.
Reel/Frame 036400/0385 →
CHANGE OF NAME Recorded Dec 18, 2014
From: HITACHI SOFTWARE ENGINEERING CO., LTD.
To: HITACHI SOLUTIONS, LTD.
Reel/Frame 034550/0494 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2004
From: SATO, KEIICHI; KUWABATA, SUSUMU
To: HITACHI SOFTWARE ENGINEERING CO., LTD.
Reel/Frame 016311/0125 →