Light-emitting element having PNPN-structure and light-emitting element array
View Patent ↗A light-emitting element including a light-emitting thyristor and a schottky barrier diode is provided. A schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0 V by using such a schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
1. A light-emitting element comprising:
at least one light-emitting thyristor fabricated by a PNPN-structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer are stacked in this order on a first conductivity-type semiconductor substrate, and including a gate electrode ohmically contacted to a gate layer of the PNPN-structure; and
at least one schottky barrier diode structured by a schottky junction between the gate layer and at least one metal terminal.
2. The light-emitting element according to claim 1 , wherein the metal terminal is composed of a metal selected from a group consisting of Au, Al, Pt, Ti, Mo, W, WSi, and TaSi.
3. The light-emitting element according to claim 1 , wherein the PNPN-structure is composed of AlGaAs and the metal terminal is formed by an Al wiring.
4. A light-emitting element comprising:
at least one light-emitting thyristor fabricated by a PNPN-structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer are stacked in this order on a first conductivity-type semiconductor substrate; and
a logic circuit for controlling the light-emitting state of the light-emitting thyristor, comprising at least two schottky barrier diodes, each diode formed on any of the semiconductor layers of the PNPN-structure.
5. The light-emitting element according to claim 4 , wherein the logic circuit is an OR gate consisting of a diode-diode logic.
6. The light-emitting element according to claim 4 , wherein the logic circuit is an AND gate consisting of a diode-diode logic.
7. The light-emitting element according to claim 4 , wherein the logic circuit is a set-reset flip-flop.