IP Library Granted Patent US 7,833,503
Granted Patent B2
US 7,833,503 · App. 10/509,398 · Granted Nov 16, 2010

Exhaust gas treatment

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Quick Facts
Patent No.
US 7,833,503
App. No.
10/509,398
Granted
Nov 16, 2010
Kind
B2
Abstract

A method for scrubbing a halogen-containing gas, comprises contacting the halogen-containing gas with water at a temperature of at least 30° C., the gas optionally subsequently being subjected to a further treatment step comprising contacting it with water at a temperature of less than 30° C. and/or a gas dilution step. An apparatus for carrying out the method comprises a hot wash chamber ( 6 ) and optionally a cold wash chamber ( 7 ) and/or a gas dilution device ( 13 ).

Claims (18)

1. A method of scrubbing a halogen-containing gas stream, comprising:

contacting the gas stream with water at a temperature of at least 40° C. for facilitating chemical reaction between the gas stream and the water at a temperature of at least 40° C.; and

a further treatment step comprising contacting the gas stream with water at a temperature of less than 30° C. for dissolving the gas steam in the water of less than 30° C.

2. A method according to claim 1 , in which the water is in the liquid phase.

3. A method according to claim 1 , in which the gas stream is contacted with water vapor.

4. A method according to claim 1 , in which the gas stream is contacted with water at a temperature of from 35° C. to 80° C.

5. A method according to claim 1 , comprising diluting the gas stream with a diluent gas.

6. A method according to claim 5 in which the gas stream is contacted with the diluent gas in a cyclone device.

7. A method of claim 1 , comprising subsequently treating the gas stream in a cyclone device in which it is diluted with a diluent gas stream and withdrawing separately from the cyclone device solid particulate material and a treated gas stream.

8. A method according to claim 7 , in which the diluent gas is air.

9. A method according to claim 7 , in which the halogen-containing gas stream is an exhaust gas from semiconductor manufacture.

10. A method according to claim 7 , in which in the water-contacting step the gas stream is arranged to be in generally counterflow relationship with the water.

11. A method according to claim 10 , in which in the water-contacting step the gas stream is caused to flow in a generally upward direction and the water is caused to flow in a generally downward direction.

12. A method according to claim 7 , in which the halogen-containing gas stream is a fluorine-containing gas stream.

13. A method according to claim 5 in which the diluent gas is air.

14. A method according to claim 1 , in which the halogen-containing gas stream is an exhaust gas from semiconductor manufacture.

15. A method according to claim 1 , in which in the water-contacting step the gas stream is arranged to be in generally counterflow relationship with the water.

16. A method according to claim 1 , in which the halogen-containing gas stream is a fluorine-containing gas stream.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2007
From: THE BOC GROUP PLC; BOC LIMITED
To: EDWARDS LIMITED
Reel/Frame 020083/0897 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2005
From: CLEMENTS, CHRISTOPHER JAMES PHILIP; BAKER, DEREK MARTIN; SEELEY, ANDREW JAMES
To: BOC GROUP PLC, THE
Reel/Frame 017333/0640 →