Light-emitting diode, its manufacturing method, and display device using the same
View Patent ↗Provided is a light emitting diode and method for fabricating the same, and a display device using the same, wherein the light emitting diode at least comprises a high refractive index layer on a light transmissive substrate; and an organic electroluminescence (EL) element formed of one organic thin layer or a plurality of organic thin layers interposed between a transparent first electrode and a second electrode formed on the high refractive index layer, and the high refractive index layer has a refractive index higher than that of an emitting layer or has a refractive index of 1.65 or more, and an interface between the high refractive index layer and the light transmissive substrate is roughed to have its center line average roughness in a range of 0.01 μm to 0.6 μm so that light leakage is be prevented and light extraction efficiency becomes higher.
1. A light emitting diode, comprising:
a high refractive index layer on a light transmissive substrate; and
an organic electroluminescence (EL) element formed of one organic thin layer or a plurality of organic thin layers interposed between a transparent first electrode and a second electrode,
wherein the high refractive index layer has a refractive index higher than that of an emitting layer, and an interface between the high refractive index layer and the light transmissive substrate has its center line average roughness in a range of 0.01 μm to 0.6 μm, and
wherein the interface between the light transmissive substrate and the high refractive index layer has a developing area ratio of at least 1.02.
2. The light emitting diode as claimed in claim 1 , wherein the high refractive index layer is formed of Si 3 N 4 .
3. The light emitting diode as claimed in claim 1 , wherein the light transmissive substrate is formed of a plurality of light transmissive layers, and the light transmissive layer in contact with the high refractive index layer has a refractive index lower than those of the rest light transmissive layers.
4. The light emitting diode as claimed in claim 3 , wherein the light transmissive layer in contact with the high refractive index layer is formed of porous silica.
5. The light emitting diode as claimed in claim 1 , wherein the interface between the high refractive index layer and the light transmissive substrate is shaped by a back sputtering method with respect to the light transmissive substrate.
6. The light emitting diode as claimed in claim 1 , wherein the high refractive index layer has a thickness of 0.4 μm to 2 μm.
7. A display device in which the light emitting diodes claimed in claim 1 are arranged in a plurality of pixels.
8. A light emitting diode, comprising:
a high refractive index layer on a light transmissive substrate; and
an organic electroluminescence (EL) element formed of one organic thin layer or a plurality of organic thin layers interposed between a transparent first electrode and a second electrode,
wherein the high refractive index layer has a refractive index of at least 1.65, and an interface between the high refractive index layer and the light transmissive substrate has its center line average roughness in a range of 0.01 μm to 0.6μm,
wherein the interface between the light transmissive substrate and the high refractive index layer has a developing area ratio of at least 1.02.
9. The light emitting diode as claimed in claim 8 , wherein the high refractive index layer is formed of Si 3 N 4 .
10. The light emitting diode as claimed in claim 8 , wherein the light transmissive substrate is formed of a plurality of light transmissive layers, and the light transmissive layer in contact with the high refractive index layer has a refractive index lower than those of the rest light transmissive layers.
11. The light emitting diode as claimed in claim 10 , wherein the light transmissive layer in contact with the high refractive index layer is formed of porous silica.
12. The light emitting diode as claimed in claim 8 , wherein the interface between the high refractive index layer and the light transmissive substrate is shaped by a back sputtering method with respect to the light transmissive substrate.
13. The light emitting diode as claimed in claim 8 , wherein the high refractive index layer has a thickness of 0.4 μm to 2 μm.
14. A display device in which the light emitting diodes claimed in claim 8 , are arranged in a plurality of pixels.