Method for manufacturing semiconductor device
View Patent ↗In a production of a semiconductor device, after a step in which a thermosetting resin is thermally cured to seal a semiconductor chip with the resin and before a step in which a characteristic of the semiconductor chip is inspected, the thermosetting resin is baked at a temperature higher than the resin sealing temperature in said resin sealing step.
1. A method of making a semiconductor device to be soldered with an Sn—Ag—Cu type solder to a substrate, the method comprising:
(a) sealing the semiconductor device in a package by surrounding it with thermosetting epoxy resin and thermally curing the resin at a first temperature;
(b) baking the thermosetting epoxy resin at a second temperature not higher than the first temperature;
(c) further baking the thermosetting epoxy resin at a third temperature higher than the first temperature, wherein the third temperature is between about 220° C. and about 260° C.; and
(d) inspecting the semiconductor device.
2. A method as in claim 1 wherein step (b) advances curing of the thermo setting epoxy resin.
3. A method as in claim 1 wherein the semiconductor device comprises an integrated circuit.
4. A method as in claim 1 wherein step (a) includes a transfer molding process.
5. A method as in claim 1 wherein step (a) includes a potting process.
6. A method as in claim 1 wherein a conductive lead is adhesively affixed to a main surface of the semiconductor device.
7. A method as in claim 6 wherein the conductive lead is adhesively affixed to a peripheral portion of the main surface of the semiconductor device.
8. A method as in claim 7 wherein an electrode of the semiconductor device is electrically connected to the conductive lead.