Plasma display panel, method for producing same and material for protective layer of such plasma display panel
View Patent ↗A plasma display panel (PDP) includes front plate, scan electrodes and sustain electrodes both formed on front plate, dielectric layer covering scan and sustain electrodes, and protective layer formed on dielectric layer. Protective layer contains silicon (Si) and nitrogen (N), and is made of magnesium oxide (MgO) including Si of which atoms count in the range from 5×10 18 pieces/cm 3 to 8×10 21 pieces/cm 3 . The foregoing construction allows the PDP to shorten a discharge-delay time, achieve a quick response of discharge to a voltage applied, and suppress changes of the discharge-delay time with respect to a temperature.
1. A plasma display panel (PDP) adopting an AC surface discharge method comprising:
forming a front panel including:
a scan electrode and a sustain electrode both formed on a plate and to which a voltage is applied in order to generate discharge;
a dielectric layer covering the scan electrode and the sustain electrode; and
a protective layer formed on the dielectric layer, and
forming a back panel including:
an electrode protective layer covering an address electrode formed on a plate;
a barrier rib formed on the electrode protective layer; and
a phosphor layer provided between the barrier rib,
wherein the front panel and the back panel are arranged to oppose each other, and circumference thereof is sealed together so as to form a discharge space therebetween, and
wherein the protective layer on the dielectric layer is made of magnesium oxide (MgO) including silicon (Si) of which atoms count in a range from 5×10 18 pieces/cm 3 to 2×10 21 pieces/cm 3 and nitrogen (N) of which atoms count in a range from 1×10 18 pieces/cm 3 to 8×10 21 pieces/cm 3 .
2. A method of manufacturing a plasma display panel (PDP) adopting an AC surface discharge method, the method comprising the steps of:
forming a front panel including:
a scan electrode and a sustain electrode both formed on a plate and to which a voltage is applied in order to generate discharge;
a dielectric layer covering the scan electrode and the sustain electrode; and
a protective layer formed on the dielectric layer; and
forming a back panel including:
an electrode protective layer covering an address electrode formed on a plate;
a barrier rib formed on the electrode protective layer; and
a phosphor layer provided between the barrier rib,
wherein the front panel and the back panel are arranged to oppose each other, and circumference thereof is sealed together so as to form a discharge space therebetween,
wherein forming the protective layer on the dielectric layer includes a process for forming a film that uses material of the protective layer, which material is made of magnesium oxide (MgO) including silicon (Si) and nitrogen (N), and
wherein a concentration of the Si falls within a range from 7 weight ppm to 8000 weight ppm, and a concentration of the N falls within a range from 4 weight ppm to 6000 weight ppm.
3. A method of manufacturing a PDP adopting an AC surface discharge method, the method comprising the steps of:
forming a front panel including:
a scan electrode and a sustain electrode both formed on a plate and to which a voltage is applied in order to generate discharge;
a dielectric layer covering the scan electrode and the sustain electrode; and
a protective layer formed on the dielectric layer; and
forming a back panel including:
an electrode protective layer covering an address electrode formed on a plate;
a barrier rib formed on the electrode protective layer; and
a phosphor layer provided between the barrier rib,
wherein the front panel and the back panel are arranged to oppose each other, and circumference thereof is sealed together so as to form a discharae space therebetween, and
wherein forming the protective layer on the dielectric layer includes a process for forming a film that uses material of the protective layer, which the material is made of magnesium oxide (MgO) including silicon nitride (Si 3 N 4 ) of which concentration falls within a range from 10 weight ppm to 15000 weight ppm.
4. Material of a protective layer of a plasma display panel adopting an AC surface discharge method, the plasma display panel comprising a front panel including scan electrode and a sustain electrode both formed on a plate and to which a voltage is applied in order to generate discharge; a dielectric layer covering the scan electrode and the sustain electrode; and a protective layer formed on the dielectric layer, and a back panel including: an electrode protective layer covering an address electrode formed on a plate; a barrier rib formed on the electrode protective layer, and a phospher layer provided between the barrier rib, wherein the front panel and the back panel are arranged to oppose each other, and circumference thereof is sealed together so as to form a discharge space therebetween.
wherein the material is made of magnesium oxide (MgO) including Si and N, wherein a concentration of the Si falls within a range from 7 weight ppm to 8000 weight ppm, and a concentration of the N falls within a range from 4 weight ppm to 6000 weight ppm.
5. Material of a protective layer of a plasma display panel adopting an AC surface discharge method, the plasma display panel comprising a front panel including a scan electrode and a sustain electrode both formed on a plate and to which a voltage is applied in order to generate discharge; a dielectric layer covering the scan electrode and the sustain electrode; and a protective layer formed on the dielectric layer, and a back panel including: an electrode protective layer covering an address electrode formed on a plate; a barrier rib formed on the electrode protective layer; and a phosphor layer provided between the barrier rib, wherein the front panel and the back panel are arranged to oppose each other and circumference thereof is sealed together so as to form a discharge space therebetween, and
wherein the material is made of magnesium oxide (MgO) including silicon nitride (Si 3 N 4 ) of which concentration falls within a range from 10 weight ppm to 15000 weight ppm.