Coherent THz emitter with DC power reducing resistor
View Patent ↗An emitter for emitting radiation in a first range of frequencies comprising: a photoconductive material ( 11 ); and first and second contact elements ( 12, 13, 14 ) separated by a photoconducting gap provided by said photoconducting material ( 11 ), for applying a bias across said photoconducting gap, wherein at least one of said first and second contact elements ( 12, 13, 14 ) comprises a resistive element ( 14 ) for restricting current flow between said first and second contact elements in a second range of frequencies lower than the first range of frequencies.
1. An emitter for emitting radiation in a first range of frequencies comprising:
a photoconductive material; and
first and second contact elements separated by a photoconducting gap provided by said photoconducting material, for applying a bias across said photoconducting gap,
wherein at least one of said first and second contact elements comprises a resistive element for restricting current flow between said first and second contact elements in a second range of frequencies lower than the first range of frequencies.
2. An emitter according to claim 1 , wherein the first range of frequencies falls within at least a part of the frequency range from 0.02 THz to 100 THz.
3. An emitter according to claim 1 , wherein said at least one contact element further comprises an antenna electrode provided in series with said resistive element, said antenna electrode being provided adjacent said photoconducting gap and having a lower resistance than said resistive element.
4. An emitter according to claim 1 , wherein said at least one electrode further comprises a contact electrode provided in series with said resistive element, to allow an external electrical connection to be made to said resistive element.
5. An emitter according to claim 1 , wherein the resistive element is integrated onto the emitter.
6. An emitter according to claim 1 , wherein the resistive element comprises at least one of the following:
Indium Tin Oxide, Indium Oxide, Tin Oxide, Indium Titanium Oxide, Titanium Oxide, Nickel-Chrome, doped Silicon Dioxide, Silicide, Poly-Silicon, Carbon, doped GaAs, lightly doped Silicon, nichrome or AlGaAs heterolayer.
7. An emitter according to claim 1 , wherein the photoconductive material comprises at least one of the following:
Si, Ge, GaAs, LT-GaAs, As-implanted GaAs, InAs, ion-implanted Si, ion-implanted Ge, LT-InAs, LT-InGaAs, LT-AlGaAs, a III-V group semiconductor, a II-VI group semiconductor, an ion-implanted semiconductor and a low temperature grown semiconductor.
8. An emitter according to claim 1 , further comprising a dielectric film at least partially covering an emission surface of the emitter.
9. An emitter according to claim 3 , wherein a dielectric film at least partially covers the antenna electrode.
10. An emitter according to claim 1 , wherein a dielectric film at least partially covers the photoconductive gap.
11. An emitter according to claim 8 , wherein the dielectric film comprises at least one of the following:
Silicon Nitride, Polyimide, Gallium Nitride, Acrylic or Silicon Dioxide.
12. An emitter according to claim 1 , wherein the edges of the contact elements which are adjacent the photoconducting gap are recessed below the surface of the photoconductive material.
13. An emitter according to claim 1 , wherein the edges of the first and second contact elements provided adjacent the photoconducting gap are rounded.
14. An emitter according to claim 1 , wherein said resistive element has a resistance R, where
R
>
1
AC
where A is the repetition frequency of an excitation laser and C is the capacitance of the contact elements.
15. An emitter according to claim 1 , wherein said resistive element has a resistance of at least 5 kΩ.
16. A method of determining a resistive value for use as a biasing resistance in a terahertz emitter, comprising:
determining a value indicative of a repetition frequency of an excitation laser;
determining a value indicative of a capacitance of the emitter; and
calculating the resistive value by equating the value indicative of the repetition frequency with an RC-time constant of the terahertz emitter.
17. A method for determining a resistive value, R, for use as a series biasing resistance in a terahertz emitter comprising a photoconductive substrate and an antenna electrode on the substrate surface, the method comprising:
determining the resistive value using the formula:
A =1/( RC )
where A is a repetition frequency of an excitation laser and C is the capacitance of the antenna electrode.
18. The method of claim 17 , wherein C further comprises the capacitance of conductors between the resistive element and an antenna, which feed the antenna.
19. An apparatus for imaging comprising an emitter as claimed claim 1 .
20. An apparatus for determining compositional information of structures comprising an emitter as claimed in claim 1 .
21. The apparatus of claim 19 , further comprising a transformer for biasing the emitter with an AC voltage.
22. The apparatus of claim 19 , further comprising a pulsed laser source.
23. A system for generating and detecting terahertz radiation including an emitter as claimed in claim 1 , and a detector which comprises a bowtie antenna terahertz receiver.
24. A system for generating THz radiation, comprising:
an emitter comprising a photoconductive material and first and second contact elements separated by a photoconducting gap provided by said photoconducting material for applying a bias across said photoconducting gap,
a bias signal source for said emitter configured to output and AC signal; and
a step-up transformer located between said bias signal source and said emitter.
25. A system according to claim 24 , wherein said bias signal source is configured to output a signal having a voltage in the range from 1V to 5V.
26. A system according to claim 24 , wherein said transformer has a ratio of 1:50.