Process for producing high-purity silicon and apparatus
View Patent ↗When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point of the silicon or less.
1. A method of producing high purity silicon using silicon tetra-chioride as raw material comprising the steps of:
1) performing a gas phase reaction between silicon tetra-chloride and metal zinc in zinc chloride gas in a reaction furnace;
2) separating produced metal silicon in a liquid state from gas;
3) separating a part of the zinc chloride gas which is cooled and liquefied;
4) electrolyzing the liquid zinc chloride to produce chlorine gas and molten zinc;
5) vaporizing the produced molten zinc by heating which is sent to the reaction furnace;
6) reacting the chlorine gas produced by the electrolysis with coarse silicon to generate coarse silicon tetra-chloride;
7) purifying the coarse silicon tetra-chloride by means of distillation; and
8) vaporizing the purified silicon tetra-chloride which is sent to the reaction furnace.
2. The method of producing the high purity silicon as claimed in claim 1 characterized by further comprising a step of eliminating the reaction gas contained in the metal silicon between the steps 2) and 3)
3. The method of producing the high purity silicon as claimed in claim 1 characterized in that the reaction furnace is a cyclone melting furnace in which reaction gasses are circulated by atmospheric gas circulating therein for performing the reaction, thereby minimizing contact with a side wall of the reaction furnace.
4. The method of producing the high purity silicon as claimed in claim 1 characterized in that reaction temperature is 1300° C. or more, and the silicon produced in the reaction goes downward as fine particle and/or liquid drop to be held in a silicon melt reservoir placed below the reaction furnace.
5. The method of producing the high purity silicon as claimed in claim 1 characterized in that the gas component in the produced silicon melt is eliminated by passing argon gas through the silicon melt.
6. The method of producing the high purity silicon as claimed in claim 1 characterized in that the electrolysis of the zinc chloride is conducted without support electrolyte.
7. The method of producing the high purity silicon as claimed in claim 1 characterized in that the chlorine gas generated by the electrolysis of the zinc chloride is taken out from an upper part of the electrolytic cell and the molten zinc from a bottom part.
8. The method of producing the high purity silicon as claimed in claim 1 characterized in that the chlorine gas generated by the electrolysis is in contact with raw material metal silicon at the higher temperature to be converted into coarse silicon tetra-chloride which is liquefied and stored at ordinary temperature and then purified with distillation for use as raw material silicon tetra-chloride so that the generated chlorine is not required to be stored as gas or liquid.