ZnO/Cu(InGa)Se
View Patent ↗A process for making a thin film ZnO/Cu(InGa)Se 2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se 2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se 2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se 2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se 2 .
1. A process for making a thin film ZnO/Cu(InGa)Se 2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising:
a) depositing Cu(InGa)Se 2 layer on a metal back contact deposited on a glass substrate;
b) heating the Cu(InGa)Se 2 layer on said metal back contact on said glass substrate to a temperature range between about 100° C. to about 250° C.;
c) subjecting the heated layer of Cu(InGa)Se 2 to an evaporant species from Zn acetate dihydrate to dope the Cu(InGa)Se 2 with Zn and form a ZnO deposit and etching with acetic acid in an amount of 50% by volume in water to remove the ZnO deposit; and
d) sputter depositing ZnO on the Zn acetate dihydrate evaporant species treated layer of Cu(InGa)Se 2 .
2. The process of claim 1 wherein said metal back contact is Mo.
3. The process of claim 2 wherein in step c) the heated layer of Cu(InGa)Se 2 is subjected to said evaporant species from said zinc acetate dihydrate under a vacuum.
4. The process of claim 3 wherein the substrate temperature is about 100° C. during said heating.
5. The process of claim 4 wherein, prior to sputter depositing ZnO in step d) an annealing step is performed at a temperature range from about 150° C. to about 200° C.
6. The process of claim 3 wherein the substrate temperature is about 150° C. during said heating.
7. The process of claim 6 wherein, prior to sputter depositing ZnO in step d) an annealing step is performed at a temperature range from about 150° C. to about 200° C.
8. The process of claim 3 wherein the substrate temperature is about 200° C. during said heating.
9. The process of claim 8 wherein, prior to sputter depositing ZnO in step d) an annealing step is performed at a temperature range from about 150° C. to about 200° C.
10. The process of claim 3 wherein the substrate temperature is between 200° C. and 250° C. during said heating.
11. The process of claim 10 wherein, prior to sputter depositing ZnO in step d) an annealing step is preformed at a temperature range from about 150° C. to about 200° C.